Tungsten oxide (WO3) films were deposited on p-type Si (100) substrates using atomic layer deposition (ALD) technology with 200 and 600 ALD deposition cycles and furnace annealed at different temperatures. The thicker 600 ALD cycle WO3 samples were annealed at 150, 250, and 300 °C, whereas the thinner 200 ALD cycle sample was annealed at 250 °C. We tested these films for structural and nanomechanical properties and for surface morphology using nanoindentation. The structural and surface properties were explored using scanning electron microscopy and atomic force microscopy. We discuss the influence of the deposition technique on the structure and properties of the WO3 films citing the characteristic features of the ALD technique that was us...
Tungsten trioxide (WO3) is a versatile n-type semiconductor with outstanding chromogenic properties ...
The electronic, morphological and structural properties of WO3 thin films, synthesized via a sol-gel...
Thin films of tungsten oxide were deposited onto silicon substrates using reactive rf sputtering. Th...
This study investigates the nanomechanical properties and surface morphology of tungsten oxide WO3th...
AbstractTungsten oxide is deposited by atomic layer deposition (ALD) using tungsten hexacarbonyl [W(...
The surface layer formed during chemical vapour deposition (CVD) of tungsten trioxide thin films was...
We studied the effect of annealing temperature on the physical properties of WO3 thin films using di...
By resistively heating tungsten filaments in a constant air flow under a reduced pressure, nanogranu...
Unique and distinctive properties could be obtained on such two-dimensional (2D) semiconductor as tu...
Though tungsten trioxide (WO3) in bulk, nanosphere, and thin film samples has been extensively studi...
AbstractNanostructured WO3 films are prepared on p-Si substrate by facing target sputtering (FTS) me...
Transition metal oxides represent a novel class of compounds which have attracted a considerable int...
Atomic force microscopy imaging of chemical vapor deposition WO3 films reveals the presence of domed...
Atomic layer deposition (ALD) is one of the most promising technologies in producing highly conforma...
In this study, we focused on examining the effect of annealing on the structural, morphological, and...
Tungsten trioxide (WO3) is a versatile n-type semiconductor with outstanding chromogenic properties ...
The electronic, morphological and structural properties of WO3 thin films, synthesized via a sol-gel...
Thin films of tungsten oxide were deposited onto silicon substrates using reactive rf sputtering. Th...
This study investigates the nanomechanical properties and surface morphology of tungsten oxide WO3th...
AbstractTungsten oxide is deposited by atomic layer deposition (ALD) using tungsten hexacarbonyl [W(...
The surface layer formed during chemical vapour deposition (CVD) of tungsten trioxide thin films was...
We studied the effect of annealing temperature on the physical properties of WO3 thin films using di...
By resistively heating tungsten filaments in a constant air flow under a reduced pressure, nanogranu...
Unique and distinctive properties could be obtained on such two-dimensional (2D) semiconductor as tu...
Though tungsten trioxide (WO3) in bulk, nanosphere, and thin film samples has been extensively studi...
AbstractNanostructured WO3 films are prepared on p-Si substrate by facing target sputtering (FTS) me...
Transition metal oxides represent a novel class of compounds which have attracted a considerable int...
Atomic force microscopy imaging of chemical vapor deposition WO3 films reveals the presence of domed...
Atomic layer deposition (ALD) is one of the most promising technologies in producing highly conforma...
In this study, we focused on examining the effect of annealing on the structural, morphological, and...
Tungsten trioxide (WO3) is a versatile n-type semiconductor with outstanding chromogenic properties ...
The electronic, morphological and structural properties of WO3 thin films, synthesized via a sol-gel...
Thin films of tungsten oxide were deposited onto silicon substrates using reactive rf sputtering. Th...