Add to ORKGand leakage current characteristics of selective CVD tungsten films on the silicon substrat
Thm film properties of tungsten nucleation layers were investigated as a function of SiH4:WF6 flow r...
By forcing the CVD-W reactor in extreme starvation conditions it is possible to obtain low (tensile ...
The effect of various plasma and wet chemical surface treatments on the encroachment of tungsten int...
ABSTRACT- In this study we investigated the effects of SF, and CF, plasma p~etreatments on the adhes...
Tungsten metal is used as an electrical conductor in many modern microelectronic devices. One of the...
This work was a detailed investigation into the Chemical Vapour Deposition (CVD) of tungsten and tun...
Tungsten films have been deposited selectively on oxide-patterned silicon wafers by the H2 reduction...
Chemical vapor deposited (CVD) tungsten silicide films were formed by a cold wall reactor. These fil...
This study assesses the use of selective LPCVD tungsten as a contact barrier in VLSI circuits. Measu...
Preclean of aluminum trench and via patterned substrates i vital for successful selective chemical v...
We have analyzed the interracial structure of selectively deposited LPCVD tungsten on monocrystallin...
The growth rate of selective tungsten using tungsten hexafluoride (WF6) and silane (SiH4) was measur...
Abstract A kinetic study of chemical vapor deposition of tungsten silicide films was made, focusing ...
cil~~j Two major problems associated with Si-based MEMS (MicroElectro~echanical Systems) “ devices a...
The reaction between chemical vapor deposited (CVD) tungsten silicide (WSix) film and aluminum film ...
Thm film properties of tungsten nucleation layers were investigated as a function of SiH4:WF6 flow r...
By forcing the CVD-W reactor in extreme starvation conditions it is possible to obtain low (tensile ...
The effect of various plasma and wet chemical surface treatments on the encroachment of tungsten int...
ABSTRACT- In this study we investigated the effects of SF, and CF, plasma p~etreatments on the adhes...
Tungsten metal is used as an electrical conductor in many modern microelectronic devices. One of the...
This work was a detailed investigation into the Chemical Vapour Deposition (CVD) of tungsten and tun...
Tungsten films have been deposited selectively on oxide-patterned silicon wafers by the H2 reduction...
Chemical vapor deposited (CVD) tungsten silicide films were formed by a cold wall reactor. These fil...
This study assesses the use of selective LPCVD tungsten as a contact barrier in VLSI circuits. Measu...
Preclean of aluminum trench and via patterned substrates i vital for successful selective chemical v...
We have analyzed the interracial structure of selectively deposited LPCVD tungsten on monocrystallin...
The growth rate of selective tungsten using tungsten hexafluoride (WF6) and silane (SiH4) was measur...
Abstract A kinetic study of chemical vapor deposition of tungsten silicide films was made, focusing ...
cil~~j Two major problems associated with Si-based MEMS (MicroElectro~echanical Systems) “ devices a...
The reaction between chemical vapor deposited (CVD) tungsten silicide (WSix) film and aluminum film ...
Thm film properties of tungsten nucleation layers were investigated as a function of SiH4:WF6 flow r...
By forcing the CVD-W reactor in extreme starvation conditions it is possible to obtain low (tensile ...
The effect of various plasma and wet chemical surface treatments on the encroachment of tungsten int...