Add to ORKGAbstract — We characterize and optimize Double Gate (DG) single-transistor (1T) DRAM via extensive simulations. We propose a new kind of DRAM: 1T-Quantum Well DRAM: which has a “storage pocket ” for holes within the body. This memory gives the opportunity to engineer spatial hole distribution within the body of the device, which is not possible with the conventional 1T DRAMs. Using this novel device we demonstrate approximately 2 order of magnitude increase in the drain current (Id) difference between the reads of two states of the memory. We study the retention characteristics of this novel DRAM, and also investigate the effect of Quantum Well depth on the retention characteristics. I
Selected Papers from the Workshop on Frontiers in Electronics 2011 (WOFE-11)San Juan, Puerto-Rico, 1...
Abstract The DRAM based on the dual-gate tunneling FET (DGTFET) has the advantages of capacitor-less...
In-memory computing is an alternative method to effectively accelerate the massive data-computing ta...
In this study, a capacitorless one-transistor dynamic random-access memory (1T-DRAM) cell based on a...
Abstract The larger volume of capacitor and higher leakage current of transistor have become the inh...
One of the major concerns of one-transistor dynamic random access memory (1T-DRAM) is poor retention...
In this work, we propose a new compact model dedicated to Quantum-Dot-based Multi Tunnel Junction Me...
A novel vertical dual surrounding gate transistor with embedded oxide layer is proposed for capacito...
TCAD simulations have been performed using SILVACO ATLAS 2D device simulator for a Zero-Capacitor Ra...
The work showcases the utility of core-gate shell-channel (CGSC) architecture for one-transistor dyn...
An experimental realization and application of a new quantum transistor is reported herein. The cond...
As the DRAM cell shrinks, the down scaling becomes increasingly difficult in particular due to the c...
International audienceSeveral types of floating-body capacitorless 1T-DRAM memory cells with planar ...
Abstract: We fabricated fully depleted (FD) SOI-based 1T-DRAM cells with planar channel or recessed...
To overcome the scalability issues and process complexity of 1-transistor/1-capacitor DRAM cell, cap...
Selected Papers from the Workshop on Frontiers in Electronics 2011 (WOFE-11)San Juan, Puerto-Rico, 1...
Abstract The DRAM based on the dual-gate tunneling FET (DGTFET) has the advantages of capacitor-less...
In-memory computing is an alternative method to effectively accelerate the massive data-computing ta...
In this study, a capacitorless one-transistor dynamic random-access memory (1T-DRAM) cell based on a...
Abstract The larger volume of capacitor and higher leakage current of transistor have become the inh...
One of the major concerns of one-transistor dynamic random access memory (1T-DRAM) is poor retention...
In this work, we propose a new compact model dedicated to Quantum-Dot-based Multi Tunnel Junction Me...
A novel vertical dual surrounding gate transistor with embedded oxide layer is proposed for capacito...
TCAD simulations have been performed using SILVACO ATLAS 2D device simulator for a Zero-Capacitor Ra...
The work showcases the utility of core-gate shell-channel (CGSC) architecture for one-transistor dyn...
An experimental realization and application of a new quantum transistor is reported herein. The cond...
As the DRAM cell shrinks, the down scaling becomes increasingly difficult in particular due to the c...
International audienceSeveral types of floating-body capacitorless 1T-DRAM memory cells with planar ...
Abstract: We fabricated fully depleted (FD) SOI-based 1T-DRAM cells with planar channel or recessed...
To overcome the scalability issues and process complexity of 1-transistor/1-capacitor DRAM cell, cap...
Selected Papers from the Workshop on Frontiers in Electronics 2011 (WOFE-11)San Juan, Puerto-Rico, 1...
Abstract The DRAM based on the dual-gate tunneling FET (DGTFET) has the advantages of capacitor-less...
In-memory computing is an alternative method to effectively accelerate the massive data-computing ta...