Multilayers of Ni-2lAl and Ni-ZOCr-1OAl were subjected to ion beam mixing using 350 keV Ni+ ions and/or thermal annealing at 440 o C to study the development of grain growth and phase morphology. Two film thicknesses of Ni-21 Al (60 and 120 nm) were investigated. Both thermal annealing and irradiation resulted in grain growth in the Ni-21Al samples. Grain size increased by a factor of 7 after irradiation and only 3-4 after annealing. Annealing produced a two phase y + y ’ structure and nonuniform grain sizes while the irradiation produced a supersaturated solid solution with more uniform grain size. Annealing subsequent to irradiation produced a structure consisting of y + y ’ and an HCP phase. There was no difference in grain growth behavi...
The influence of the irradiation temperature Ti, on the development of disordered zones produced at ...
The effects of intense pulsed ion beams (IPIB) irradiation (ions of C+ and H+, accelerating voltage ...
This journal vol. entitled: 3rd IEEE International Symposium on Next-Generation Electronics (ISNE201...
Multilayers of Ni---21Al and Ni---20Cr---10Al were subjected to ion beam mixing using 350 keV Ni+ io...
Phase formation was studied in Ni$\sp{+}$ and Xe$\sp{+}$ ion irradiated multilayer and coevaporated ...
Ion beam mixing is used to homogenize multilayered thin films of nickel and aluminum, vapor deposite...
Phase formation was studied in ion‐irradiated multilayer and coevaporated Ni‐20 at. % Al films suppo...
Irradiation experiments were conducted on multilayer (ML) and coevaporated (CO) thin films in order ...
Phase transformations induced by ion beam mixing of nickel-aluminum alloys with 500 keV krypton ions...
Irradiation experiments were conducted on multilayer (ML) and coevaporated (CO) thin films in order ...
There are essentially four basic types of metastable alloys which may be formed through heavy ion ir...
The effect of argon ion bombardment on the structure and properties of nickel and silver films was s...
We report on the growth of thin NiSi films via the thermal reaction of Ni layers (13-35 nm) with Si(...
Ion implantation and thermal annealing effects on composition and structure of Ni/Ti multilayer have...
134 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2001.In the experimental part, we ...
The influence of the irradiation temperature Ti, on the development of disordered zones produced at ...
The effects of intense pulsed ion beams (IPIB) irradiation (ions of C+ and H+, accelerating voltage ...
This journal vol. entitled: 3rd IEEE International Symposium on Next-Generation Electronics (ISNE201...
Multilayers of Ni---21Al and Ni---20Cr---10Al were subjected to ion beam mixing using 350 keV Ni+ io...
Phase formation was studied in Ni$\sp{+}$ and Xe$\sp{+}$ ion irradiated multilayer and coevaporated ...
Ion beam mixing is used to homogenize multilayered thin films of nickel and aluminum, vapor deposite...
Phase formation was studied in ion‐irradiated multilayer and coevaporated Ni‐20 at. % Al films suppo...
Irradiation experiments were conducted on multilayer (ML) and coevaporated (CO) thin films in order ...
Phase transformations induced by ion beam mixing of nickel-aluminum alloys with 500 keV krypton ions...
Irradiation experiments were conducted on multilayer (ML) and coevaporated (CO) thin films in order ...
There are essentially four basic types of metastable alloys which may be formed through heavy ion ir...
The effect of argon ion bombardment on the structure and properties of nickel and silver films was s...
We report on the growth of thin NiSi films via the thermal reaction of Ni layers (13-35 nm) with Si(...
Ion implantation and thermal annealing effects on composition and structure of Ni/Ti multilayer have...
134 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2001.In the experimental part, we ...
The influence of the irradiation temperature Ti, on the development of disordered zones produced at ...
The effects of intense pulsed ion beams (IPIB) irradiation (ions of C+ and H+, accelerating voltage ...
This journal vol. entitled: 3rd IEEE International Symposium on Next-Generation Electronics (ISNE201...