PHOTOELECTROCHEMICAL INVESTIGATIONS OF THERMALLY FORMED FILMS ON TITANIUM SURFACES

The semi-conducting and photoelectrical properties of TiO2 films prepared with thermal oxidation of titanium in the temperature range from 200 to 600 oC were studied. Short theoretical background for application of photocur-rent in semiconductor electrochemistry was presented. For all investigated temperatures and times of thermal treat-ments the semi-conducting properties as photocurrent peaks and band gap energies were determined. At lower tem-peratures the anodic values of photocurrent peaks confirmed the existence of n-type semiconducting TiO2 films with amorphous structure. With increasing the temperature and time of thermal treatment the development of crystalline structure in the film is followed with small decreasing of band gap energy. For films formed at higher temperatures and longer time of thermal treatment the determined band gap energies are close to the 3 eV that corresponds to the rutile structure of the film. Key words: TiO2 films; semiconductor; photocurrent; rutile structure ФОТОЕЛЕКТРОХЕМИСКИ ИСТРАЖУВАЊА НА ФИЛМОВИ ТЕРМИЧКИ ФОРМИРАН