SiC DIE-SUBSTRATE CONNECTIONS FOR HIGH TEMPERATURE APPLICATIONS*

Silicon carbide (SiC) became very attractive material for high temperature and high power electronics applications due to its physical properties, which are not attainable in conventional Si semiconductor. However, the reliability of SiC devices is limited by assembly processes comprising die attachment and interconnections technology as well as the stability of ohmic contacts at high temperatures. The investigations of a die to substrate connection methods which can fulfill high temperature and high power requirements are the main focuses of the paper. In our researches following die attach technologies were applied: adhesive bonding with the use of organic and inorganic conductive compositions, solder bonding by means of gold germanium alloys, die bonding with the use of thermal conductive adhesive foil and joining technology based on low temperature sintering of silver nanoparticles. The applied bonding technologies are described and obtained results are presented