Using energies obtained from empirical-potential calculations, we study the relative stability between abrupt, ordered, and randomized interfaces in thin-layer superlattices. For most of the substrate parameter values, both ordered and randomized layers are more stable than the abrupt interface. The ordered geometries have even lower formation enthalpies than random structures. We examine the implications of these results in view of experimental studies of annealing and interdiffusion
The interfacial properties of a series of Si/Si\u2081\u208b\u2093Ge\u2093 superlattices with the sam...
Electronic structure of interfaces, their stability and the mechanism of decohesion in tension as we...
The formation of interlayer transition zones (ITZs) in sputtered Mo/Si multilayer structures was stu...
Atomistic simulations are reviewed that elucidate the causes of the anomalous elastic behavior of th...
Atomistic simulations are reviewed that elucidate the causes of the anomalous elastic behavior of th...
Interfacial interdiffusion in quantum wells and superlattices could alter the interfacial strain, ba...
Interfacial interdiffusion in quantum wells and superlattices could alter the interfacial strain, ba...
Abrupt InAs/GaSb superlattices have In-Sb and Ga-As interfacial chemical bonds that are not present ...
Abrupt InAs/GaSb superlattices have In-Sb and Ga-As interfacial chemical bonds that are not present ...
The influence of thermal annealing on the surface and interface roughness of epitaxial Ag/Pd superla...
We apply a linear stability analysis to examine the effect of misfit stress on the interface diffusi...
In this dissertation, we review the physics associated with surfaces and interfaces in equilibrium a...
Theoretical studies of interface impact on structural properties of InAs/GaSb type-II superlattices ...
A general model for treating the effects of three-dimensional (3D) interface roughness (IFR) in laye...
Rare earth Laves phase (RFe(2)) superlattice structures grown at different temperatures are studied ...
The interfacial properties of a series of Si/Si\u2081\u208b\u2093Ge\u2093 superlattices with the sam...
Electronic structure of interfaces, their stability and the mechanism of decohesion in tension as we...
The formation of interlayer transition zones (ITZs) in sputtered Mo/Si multilayer structures was stu...
Atomistic simulations are reviewed that elucidate the causes of the anomalous elastic behavior of th...
Atomistic simulations are reviewed that elucidate the causes of the anomalous elastic behavior of th...
Interfacial interdiffusion in quantum wells and superlattices could alter the interfacial strain, ba...
Interfacial interdiffusion in quantum wells and superlattices could alter the interfacial strain, ba...
Abrupt InAs/GaSb superlattices have In-Sb and Ga-As interfacial chemical bonds that are not present ...
Abrupt InAs/GaSb superlattices have In-Sb and Ga-As interfacial chemical bonds that are not present ...
The influence of thermal annealing on the surface and interface roughness of epitaxial Ag/Pd superla...
We apply a linear stability analysis to examine the effect of misfit stress on the interface diffusi...
In this dissertation, we review the physics associated with surfaces and interfaces in equilibrium a...
Theoretical studies of interface impact on structural properties of InAs/GaSb type-II superlattices ...
A general model for treating the effects of three-dimensional (3D) interface roughness (IFR) in laye...
Rare earth Laves phase (RFe(2)) superlattice structures grown at different temperatures are studied ...
The interfacial properties of a series of Si/Si\u2081\u208b\u2093Ge\u2093 superlattices with the sam...
Electronic structure of interfaces, their stability and the mechanism of decohesion in tension as we...
The formation of interlayer transition zones (ITZs) in sputtered Mo/Si multilayer structures was stu...