The structural, optical and thermoelectric properties of single target sputtered Cu2ZnSn(S,Se)(4) thin film

International audienceCu2ZnSn(S,Se)(4) (CZTSSe) thin film was fabricated by radio frequency magnetron sputtering single CZTSSe target without post-selenization or sulfuration. The formation of kesterite-type CZTSSe films with a nearly stoichiometric composition after in-situ annealing at 673 K can be achieved. The valence of the elements in CZTSSe films are Cu(I), Zn(II), Sn(IV), S(-II) and Se(-II). Optical transmission and absorption spectroscopy measurement reveal high absorption and the energy band gap is about 1.44 eV. The CZTSSe thin film is of p-type conductivity and high Seebeck coefficient value is of 450 mu V/K