Low-frequency upconverted noise (1/f laser intensity noise and the low-frequency noise of the driver source) has been identified as the dominant noise generation mechanism in microwave signals generated by a Fabry-Perot gain-switched semiconductor laser. An experimental investigation is carried out using extra low-frequency noise injection added to the drive signal. Results show the dependence of the broadband intensity noise level, formed by the overlapping of the upconverted noise sidebands present at each harmonic, on gain-switching input parameters
A large-signal, time domain semiconductor laser model that incorporates propagation effects within t...
This paper addresses both experimentally and through simulations the effects of a microwave tone on ...
Excess noise converted from the optical relative intensity noise (RIN) has limited the noise perform...
The authors show that the frequency up-conversion of low-frequency noise present in drive oscillator...
Gain-switched and mode-locked semiconductor lasers have been considered as potential optical sources...
In semiconductor lasers, spontaneous recombination of electrons and holes results in two types of no...
Presents a theoretical investigation of the noise behavior of a semiconductor laser operating under ...
Recent studies of nonlinear dynamics in semiconductor-laser-with-optical- feedback (SLwOF) systems h...
Abstract — We have investigated the spectral characteristics of semiconductor lasers locked to the e...
[[abstract]]We numerically investigate the characteristics of high-frequency microwave signal genera...
International audienceAn opto-electronic oscillator is a microwave oscillator in which the resonator...
LAT conference 6054 « International conference on Lasers, Applications and Technologies 2005: Advanc...
19th OptoElectronics and Communications Conference, OECC 2014 and the 39th Australian Conference on ...
Abstract—The spectral characteristics of a semiconductor laser are altered by injecting additional n...
We find experimentally that the relaxation oscillation (RO) peak in the relative intensity noise (RI...
A large-signal, time domain semiconductor laser model that incorporates propagation effects within t...
This paper addresses both experimentally and through simulations the effects of a microwave tone on ...
Excess noise converted from the optical relative intensity noise (RIN) has limited the noise perform...
The authors show that the frequency up-conversion of low-frequency noise present in drive oscillator...
Gain-switched and mode-locked semiconductor lasers have been considered as potential optical sources...
In semiconductor lasers, spontaneous recombination of electrons and holes results in two types of no...
Presents a theoretical investigation of the noise behavior of a semiconductor laser operating under ...
Recent studies of nonlinear dynamics in semiconductor-laser-with-optical- feedback (SLwOF) systems h...
Abstract — We have investigated the spectral characteristics of semiconductor lasers locked to the e...
[[abstract]]We numerically investigate the characteristics of high-frequency microwave signal genera...
International audienceAn opto-electronic oscillator is a microwave oscillator in which the resonator...
LAT conference 6054 « International conference on Lasers, Applications and Technologies 2005: Advanc...
19th OptoElectronics and Communications Conference, OECC 2014 and the 39th Australian Conference on ...
Abstract—The spectral characteristics of a semiconductor laser are altered by injecting additional n...
We find experimentally that the relaxation oscillation (RO) peak in the relative intensity noise (RI...
A large-signal, time domain semiconductor laser model that incorporates propagation effects within t...
This paper addresses both experimentally and through simulations the effects of a microwave tone on ...
Excess noise converted from the optical relative intensity noise (RIN) has limited the noise perform...