slurry have an important role for enhancing Cu removal rate. To understand the effects of complexing agents on the performance of Cu CMP slurry, selected complexing agents which have different functional groups were investigated. It was observed that the Cu dissolution rate was varied with the change of types and numbers of functional groups of complexing agents. By using UV-visible analysis, the changes of complex form with pH were monitored and expected reaction mechanisms were proposed. The effect of Cu oxide formation was also monitored by the coulometric reduction method (CRM) analysis. Based on CRM analysis, the evaluation of Cu oxide thickness which formed on the Cu surface during the dissolution was conducted and the relationships b...
Copper CMP process leads to various defects, for example, slurry particle, organic residue, scratch,...
The role of oxidants, complexing agents, and inhibitors in copper surface modification during Cu-che...
This study explores the effect of pH on the chemical mechanical polishing (CMP) characteristics of c...
Chemical-mechanical planarization (CMP) is a vital process for the fabrication of advanced copper mu...
Chemical-mechanical planarization (CMP) is a vital process for the fabrication of advanced copper mu...
The present investigation was focused on understanding of the oxidation, dissolution and modificatio...
Copper chemical mechanical planarization is one of the most critical techniques for damascenes inter...
Recent studies have been conducted investigating the effects of slurry chemistry on the copper CMP p...
Planarization processes such as chemical mechanical planarization (CMP) and electrochemical mechanic...
In this paper the influences of slurry chemistry and thickness of the copper layer on dishing will b...
The effect of Cu surface conditions on Cu-BTA complex formation was investigated using contact angle...
[[abstract]]There are many kinds of commercial slurries used in Cu CMP. Major components include an ...
This study compares the oxidative dissolution, passivation, and polishing behavior of copper chemica...
This study compares the oxidative dissolution, passivation, and polishing behavior of copper chemica...
This study compares the oxidative dissolution, passivation, and polishing behavior of copper chemica...
Copper CMP process leads to various defects, for example, slurry particle, organic residue, scratch,...
The role of oxidants, complexing agents, and inhibitors in copper surface modification during Cu-che...
This study explores the effect of pH on the chemical mechanical polishing (CMP) characteristics of c...
Chemical-mechanical planarization (CMP) is a vital process for the fabrication of advanced copper mu...
Chemical-mechanical planarization (CMP) is a vital process for the fabrication of advanced copper mu...
The present investigation was focused on understanding of the oxidation, dissolution and modificatio...
Copper chemical mechanical planarization is one of the most critical techniques for damascenes inter...
Recent studies have been conducted investigating the effects of slurry chemistry on the copper CMP p...
Planarization processes such as chemical mechanical planarization (CMP) and electrochemical mechanic...
In this paper the influences of slurry chemistry and thickness of the copper layer on dishing will b...
The effect of Cu surface conditions on Cu-BTA complex formation was investigated using contact angle...
[[abstract]]There are many kinds of commercial slurries used in Cu CMP. Major components include an ...
This study compares the oxidative dissolution, passivation, and polishing behavior of copper chemica...
This study compares the oxidative dissolution, passivation, and polishing behavior of copper chemica...
This study compares the oxidative dissolution, passivation, and polishing behavior of copper chemica...
Copper CMP process leads to various defects, for example, slurry particle, organic residue, scratch,...
The role of oxidants, complexing agents, and inhibitors in copper surface modification during Cu-che...
This study explores the effect of pH on the chemical mechanical polishing (CMP) characteristics of c...