It is shown by electrical property measurements that extended annealing at 450 ~ introduced-> 101 ~ cm- ~ oxygen-related donors in Czochralski (Cz)-grown single crystal (SX) silicon containing _>10 ' ~ cm- ~ interstitial oxygen. The maxi-mum donor concentration attained was (i) less if the Si contained carbon, (ii) unchanged by n-type dopants, and (iii) in-creased by p-type dopants. Short-term annealing at->550 ~ removed most of the donors in Si not containing aluminum. Most of the donors formed at 450 ~ in polycrystalline (PX) Cz or cast Si are not removed at 650 ~ Annealing at->550 ~ can introduce a different ype of donor in Cz SX or PX Si that is stable to>-900 ~ No donor formation was observed in low oxygen content f...
substrates used here, but the apparent acceptor con-centration in the substrata portion of several s...
We report observations on the effects of Rapid Thermal Annealing (RTA) on oxygen and carbon content ...
The microdistribution of oxygen in Czochralski-grown, p-type silicon crystals (75 mm in diameter and...
In oxygen rich CZ-material, thermal donors (TD) are formed at elevated temperatures of approximately...
In view of the interesting informations revealed by the studies of nitrogen in silicon, an attempt h...
The role of oxygen concentration on the formation/evolution of residual defects in implanted and rap...
The thermal behaviors of oxygen-related complexes in boron doped Czochralski Silicon (Cz-Si) wafers ...
Les défauts créés par un traitement à basse température du silicium Czochralski avec une teneur élev...
Les défauts créés par un traitement à basse température du silicium Czochralski avec une teneur élev...
Oxygen and carbon related defects in silicon, particularly as related to high-efficiency silicon sol...
This paper reports on capacitance measurements on Czochralski-grown and float-zone silicon subjecte...
This paper reports on capacitance measurements on Czochralski-grown and float-zone silicon subjecte...
Thermal evolution of impurity-defect complexes in proton-irradiated mono-crystalline silicon materia...
The behavior of oxygen in oxygen-doped high-resistivity (HR) n-type float-zone (FZ) silicon has been...
A model for the kinetic growth of oxygen-related thermal donors in Czochralski silicon at about 450...
substrates used here, but the apparent acceptor con-centration in the substrata portion of several s...
We report observations on the effects of Rapid Thermal Annealing (RTA) on oxygen and carbon content ...
The microdistribution of oxygen in Czochralski-grown, p-type silicon crystals (75 mm in diameter and...
In oxygen rich CZ-material, thermal donors (TD) are formed at elevated temperatures of approximately...
In view of the interesting informations revealed by the studies of nitrogen in silicon, an attempt h...
The role of oxygen concentration on the formation/evolution of residual defects in implanted and rap...
The thermal behaviors of oxygen-related complexes in boron doped Czochralski Silicon (Cz-Si) wafers ...
Les défauts créés par un traitement à basse température du silicium Czochralski avec une teneur élev...
Les défauts créés par un traitement à basse température du silicium Czochralski avec une teneur élev...
Oxygen and carbon related defects in silicon, particularly as related to high-efficiency silicon sol...
This paper reports on capacitance measurements on Czochralski-grown and float-zone silicon subjecte...
This paper reports on capacitance measurements on Czochralski-grown and float-zone silicon subjecte...
Thermal evolution of impurity-defect complexes in proton-irradiated mono-crystalline silicon materia...
The behavior of oxygen in oxygen-doped high-resistivity (HR) n-type float-zone (FZ) silicon has been...
A model for the kinetic growth of oxygen-related thermal donors in Czochralski silicon at about 450...
substrates used here, but the apparent acceptor con-centration in the substrata portion of several s...
We report observations on the effects of Rapid Thermal Annealing (RTA) on oxygen and carbon content ...
The microdistribution of oxygen in Czochralski-grown, p-type silicon crystals (75 mm in diameter and...