Sputter-deposited amorphous films of a phase-changematerial (Ge2Sb2Te5) were prepared with various magnetron sputtering powers to determine its influence. Microscopic characteristics indicate that the sputtering power affects the film morphology: high sputtering powers lead to inhomogeneous domain-like patterns. The transition temperature from a metastable phase to a hexagonal phase decreased as the sputtering power increased. However, an analysis of the radial distribution functions indicates that the sputtering power did not have a distinct influence on the inner atomic structure of the amorphous phase. Therefore, a low sputtering power is beneficial to improve the quality of sputtered amorphous films
Influence of the composition variation along the quasi-binary line GeTe-Sb2Te3 on the thermoelectric...
Reflectivity changes in oxygen-incorporated Ge2Sb2Te5 (GST) films were investigated via a laser-indu...
Phase-change Ge8Sb92 films were deposited on the varied thermal-conductivity substrates by radio fre...
Sputtered Ge2Sb2Te5 (GST) films are utilized in phase-change devices, whereas the quantitative repro...
Phase change materials have been extensively studied due to their promising applications in phase ch...
International audienceRadio-frequency magnetron co-sputtering technique with GeTe and Sb2Te3 targets...
The rapidly increasing net amount of digital information requires higher data- storage capacities an...
Ge2Sb2Te5 (GST-225) is a chalcogenide material with applications in nonvolatile memories. However, c...
As an aid toward a better understanding of data retention of phase change memories we have analyzed ...
Ge2Sb2Te5 popularly known as GST is being explored for non-volatile phase change random access memor...
Ge2Sb2Te5 (GST) films, one of the most suitable Chalcogenide alloys for Phase change Random Access M...
Data can be stored in the form of amorphous and crystalline marks within a chalcogenide thin film. C...
International audienceA radio frequency magnetron co-sputtering technique exploiting GaTe and ${\rm ...
Ge2Sb2Te5 (GST) is well known for its phase change properties and applications in memory and data st...
Chalcogenide glassy semiconductors exhibit ultrafast reversible electrical switching from highly res...
Influence of the composition variation along the quasi-binary line GeTe-Sb2Te3 on the thermoelectric...
Reflectivity changes in oxygen-incorporated Ge2Sb2Te5 (GST) films were investigated via a laser-indu...
Phase-change Ge8Sb92 films were deposited on the varied thermal-conductivity substrates by radio fre...
Sputtered Ge2Sb2Te5 (GST) films are utilized in phase-change devices, whereas the quantitative repro...
Phase change materials have been extensively studied due to their promising applications in phase ch...
International audienceRadio-frequency magnetron co-sputtering technique with GeTe and Sb2Te3 targets...
The rapidly increasing net amount of digital information requires higher data- storage capacities an...
Ge2Sb2Te5 (GST-225) is a chalcogenide material with applications in nonvolatile memories. However, c...
As an aid toward a better understanding of data retention of phase change memories we have analyzed ...
Ge2Sb2Te5 popularly known as GST is being explored for non-volatile phase change random access memor...
Ge2Sb2Te5 (GST) films, one of the most suitable Chalcogenide alloys for Phase change Random Access M...
Data can be stored in the form of amorphous and crystalline marks within a chalcogenide thin film. C...
International audienceA radio frequency magnetron co-sputtering technique exploiting GaTe and ${\rm ...
Ge2Sb2Te5 (GST) is well known for its phase change properties and applications in memory and data st...
Chalcogenide glassy semiconductors exhibit ultrafast reversible electrical switching from highly res...
Influence of the composition variation along the quasi-binary line GeTe-Sb2Te3 on the thermoelectric...
Reflectivity changes in oxygen-incorporated Ge2Sb2Te5 (GST) films were investigated via a laser-indu...
Phase-change Ge8Sb92 films were deposited on the varied thermal-conductivity substrates by radio fre...