Analysis of single-trap-induced random telegraph noise on FinFET devices, 6T SRAM cell, and logic circuits

Abstract — This paper analyzes the impacts of a single acceptor-type and donor-type interface trap induced random telegraph noise (RTN) on tunnel FET (TFET) devices and its interaction with work function variation (WFV) using atomistic 3-D TCAD simulations. Significant RTN amplitude (ID/ID) is observed for a single acceptor trap near the tunneling junction, whereas a donor trap is found to cause more severe impact over a broader region across the channel region. In addition, several device design parameters that can be used to improve TFET subthreshold characteristics (thinner equivalent oxide thickness or longer Leff) are found to increase the susceptibility to RTN. Our results indicate that under WFV, TFET exhibits weaker correlation between ION and IOFF than that in the conventional MOSFET counterpart. In the presence of WFV, the RTN ampli-tude can be enhanced or reduced depending on the type of the trap and the composition/orientation of metal-gate grain. Index Terms — Random telegraph noise (RTN), tunnel FET (TFET), variability, work function variation (WFV). I