Add to ORKGA new empirical large-signal model of Si LDMOSFETS for high-power amplifier desig
Radio frequency (RF) power devices are critical components of the transmitter of a wireless system, ...
The primary purpose of this thesis was to present a theoretical large-signal analysis to study the p...
In this paper, we propose a model for the LDMOS transistor used for power amplification in the frequ...
In this paper, we present a new silicon RF LDMOSFET large-signal model including a self-heating effe...
Lateral double-diffused MOSFETs (LDMOS) are becoming more popular in RF power amplifiers for wireles...
Abstract—A new approach for the electro-thermal modeling of LDMOSFETs for power-amplifier design tha...
In this paper, we propose a non-quasi-static large-signal model to capture the high-frequency disper...
A new quasi-two-dimensional physical model is described for microwave LDMOS power transistors. This ...
Abstract—In this paper, the intermodulation distortion (IMD) behavior of LDMOS transistors is treate...
The development of computer aided design tools for devices and circuits has increased the interest f...
The development of computer aided design tools for microwave circuit design has increased the intere...
Design of power amplifier requires a precise large-signal device model to accurately simulate large-...
Abstract — The coupling between charge transport, heat and energy flow required to model high frequ...
The coupling between charge transport, heat and energy flow required to model high frequency power d...
A new nonlinear charge-conservative scalable dynamic electro-thermal compact model for laterally def...
Radio frequency (RF) power devices are critical components of the transmitter of a wireless system, ...
The primary purpose of this thesis was to present a theoretical large-signal analysis to study the p...
In this paper, we propose a model for the LDMOS transistor used for power amplification in the frequ...
In this paper, we present a new silicon RF LDMOSFET large-signal model including a self-heating effe...
Lateral double-diffused MOSFETs (LDMOS) are becoming more popular in RF power amplifiers for wireles...
Abstract—A new approach for the electro-thermal modeling of LDMOSFETs for power-amplifier design tha...
In this paper, we propose a non-quasi-static large-signal model to capture the high-frequency disper...
A new quasi-two-dimensional physical model is described for microwave LDMOS power transistors. This ...
Abstract—In this paper, the intermodulation distortion (IMD) behavior of LDMOS transistors is treate...
The development of computer aided design tools for devices and circuits has increased the interest f...
The development of computer aided design tools for microwave circuit design has increased the intere...
Design of power amplifier requires a precise large-signal device model to accurately simulate large-...
Abstract — The coupling between charge transport, heat and energy flow required to model high frequ...
The coupling between charge transport, heat and energy flow required to model high frequency power d...
A new nonlinear charge-conservative scalable dynamic electro-thermal compact model for laterally def...
Radio frequency (RF) power devices are critical components of the transmitter of a wireless system, ...
The primary purpose of this thesis was to present a theoretical large-signal analysis to study the p...
In this paper, we propose a model for the LDMOS transistor used for power amplification in the frequ...