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high-k film on electrical properties has not been studied in detailed Downlbut initial results indicate desorption of CuO bonds at high tem-perature which in turn lead to pinhole formation that causes high leakage current.4 In this study, we reduced the leakage current by blocking the direct leakage current path caused by grain boundaries and pinholes through a multistep deposition process. The final gate stack consists of multilayers HfO2 with each layer deposited and annealed independently in a cluster tool so as to offset the grain boundaries and pinholes from one layer to another. Experimental The fabrication of metal-oxide-silicon ~MOS! capacitors started with field oxide isolation on p-type Si~100! substrate ~4-8 V cm resistivity! and active region patterning. After the standard pregate cleaning process with a final dilute 1 % HF dip, the wafers were inserted into a three-chamber MOCVD cluster tool. For some wa-fers, surface nitridation was conducted at 700°C in an NH3 ambient prior to HfO2 deposition. HfO2 was deposited using Hf(OC(CH3)3)