This work provides an innovative understanding of MIM capacitor degradation behavior under a wide range of constant current stress (CCS) conditions. It was found that capacitance degrades with stress, but the behavior of the degradation strongly depends on the stress current density. At high stress levels, the capacitance increases logarithmically as the injection charge increases until dielectric breakdown occurs. At lower stress conditions, the degradation rate is proportional to the stress current, and reverses after a certain period of time. A metal-insulator interlayer is observed to explain this reversal phenomenon. [Keywords: MIM capacitor, capacitance degradation, charge trapping, metal-insulator interlayer
ZrO2-based metal-insulator-metal (MIM) capacitors are manufactured using atomic layer deposition. Th...
The degradation and breakdown mechanisms of a SiOCH low-k material with k¼2.3 (25% porosity) and thi...
International audienceA discussion of the methodological possibilities for studying the capacitance-...
Abstract—In this paper, the dielectric relaxation and reliability of high capacitance density metal-...
In this paper we have investigated the long-term reliability of TiN/HfSixOy/TiN Metal-Insulator-Meta...
Metal-insulator-metal capacitor (MIMC) reliability and electrical properties are defined by the TDDB...
When maintaining quality of a metal-insulator-metal capacitor process, it is important to fully unde...
International audienceThe electrical reliability of HfO2 based metal–insulator–metal capacitors is i...
In this paper, charging induced damage (CID) to metal-insulator-metal capacitors (MIMC) is reported....
Abstract: In this paper, reliability of the two sandwiched MIM capacitors of Al2O3-HfO2-Al2O3 (AHA)...
Acknowledgments to G. Groeseneken and G. Van den Bosch from IMEC for the valuable inputs. In this pa...
Historically, there is a controversy regarding the current-voltage (I-V) characteristics of thin fil...
Metal Insulator Metal (MIM) capacitors are widely used in the electronic industry for DRAM as well a...
In this paper, charging induced damage (CID) to metal-insulator-metal capacitors (MIMCs), is reporte...
In this paper, charging induced damage (CID) to metal-insulator-metal-capacitator (MIMC), is reporte...
ZrO2-based metal-insulator-metal (MIM) capacitors are manufactured using atomic layer deposition. Th...
The degradation and breakdown mechanisms of a SiOCH low-k material with k¼2.3 (25% porosity) and thi...
International audienceA discussion of the methodological possibilities for studying the capacitance-...
Abstract—In this paper, the dielectric relaxation and reliability of high capacitance density metal-...
In this paper we have investigated the long-term reliability of TiN/HfSixOy/TiN Metal-Insulator-Meta...
Metal-insulator-metal capacitor (MIMC) reliability and electrical properties are defined by the TDDB...
When maintaining quality of a metal-insulator-metal capacitor process, it is important to fully unde...
International audienceThe electrical reliability of HfO2 based metal–insulator–metal capacitors is i...
In this paper, charging induced damage (CID) to metal-insulator-metal capacitors (MIMC) is reported....
Abstract: In this paper, reliability of the two sandwiched MIM capacitors of Al2O3-HfO2-Al2O3 (AHA)...
Acknowledgments to G. Groeseneken and G. Van den Bosch from IMEC for the valuable inputs. In this pa...
Historically, there is a controversy regarding the current-voltage (I-V) characteristics of thin fil...
Metal Insulator Metal (MIM) capacitors are widely used in the electronic industry for DRAM as well a...
In this paper, charging induced damage (CID) to metal-insulator-metal capacitors (MIMCs), is reporte...
In this paper, charging induced damage (CID) to metal-insulator-metal-capacitator (MIMC), is reporte...
ZrO2-based metal-insulator-metal (MIM) capacitors are manufactured using atomic layer deposition. Th...
The degradation and breakdown mechanisms of a SiOCH low-k material with k¼2.3 (25% porosity) and thi...
International audienceA discussion of the methodological possibilities for studying the capacitance-...