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m is 1 opy co the s barrie 383 A eceive The activation energy of Cu diffusion in barrier layer is an im- nealed in a vacuum furnace under a pressure of 2 10−5 Torr to-ociet $28.00 Downloportant parameter for the capability of the diffusion barrier but it cannot be determined straightforwardly. Once the Cu atoms diffuse through the diffusion barrier to the Si substrate in the Cu/barrier/Si stack structure, the formation of a Cu–Si compound can be detected in X-ray diffraction XRD patterns, and the highly resistive Cu–Si greatly increases the whole sample resistance.16 Therefore, the shee