Electron/phonon interaction in silicon quantum dots

The electron/phonon scattering rates in silicon quantum dots are calculated by including the effect of collisional broadening. The Fermi Golden Rule is modified to take into account the finite width of the energy levels. The obtained rates are then compared to typical rates of tunnel transfer through oxide barrier, which confirms that the transport in most Si dot-based single electron devices is dominated by sequential tunnelling. Furthermore, the evaluation of energy level lifetimes shows the consistency of this scattering model. 1