Growth and Characterization of ZnSe by Metalorganic

ZnSe was grown using the gaseous source epitaxial methods of metalorganic molecular beam epitaxy (MOMBE) and gas source molecular beam epitaxy (GSMBE). A nitrogen plasma source was used during GSMBE to incorporate the p-type dopant nitrogen into ZnSe epitaxial layers. The first part: of this work was the growth of undoped ZnSe by MOMBE. Diethylzinc and diethylselenium were the primary metalorganic source gases used. The MOMBE growth rate was less than 400 A/hr when a diethyl metalorganic was the source of Zn and/or Se. The low growth rate is postulated to be the result of surface passivation of metal incorporation sites by chemisorbed ethyl radicals. A parallel study of the effects of laser illumination and electron-beam irradiation during MOMBE growth was also conducted. Laser illumination and electron-beam irradiation were observed to alter the growth rate under appropriate growth conditions. An increase in the growth rate by a factor of 15 over the unilluminated growth rate was observed using laser illumination. The second part of the study was the growth of ZnSe by GSMBE, and experiments t