Deposition Rate and Phosphorus Concentration of Phosphosilicate Glass Films in Relation to PHJSiH + Mole Fraction

Phosphosilicate glass films (PSG films) have been widely used for the fabrication of semiconductor de-vices, such as stabilization of electric characteristics, insulation of mult i layer interconnection, and protection of a luminum electrodes. In spite of these wide uses, few papers have reported the detailed relation of wide range deposition parameters t~o the deposition rate and the phosphorus concentration (1-5). The authors re-ported that the deposition rate and the phosphorus concentration of the PSG films showed little variation when the films were formed under the proper mole fraction O2]SiH4+PHs, being dependent on the deposi-tion temperature (5). In this range of O2/SiH4~PHs, the dependence of PH_ ~ flow rate on the deposition rate and the phosphorus concentration is reported. The same CVD reactor used in the previous paper (5) was of planetary type (6). In this reactor, silicon mirror-polished wafers [(100) oriented and boron doped with resistivity of 30 ohm-cm] were charged, and the PSG films 3000-4000A in thickness were de-posited on the wafers by SiH4-PH~-O2 reaction at the temperatures of 350 ~ 400 ~ and 450 ~ Flow rates were: N2, 20 l iters/min; Sill4, 56 cmS/min; 02, plateau range of the small, variable deposition rate and phosphorus concentration a d being fixed at the temperatures, e.g., at 350 ~ O2/SiH4+PH8 = 5, at 400 ~ OJSiH4+PH8---