Physical and Dielectric Properties of the

Thin film capacitors using silicon dioxide as the dielectric material have been prepared by the thermal oxidation of silicon. The physical and optical characteristics of the oxide dielectric are given, and the permittivity and loss tangent of the capacitors are shown as functions of a-c frequency and d-c bias. The dielectric properties are seen to be functions of the conductivity type and resistivity of the substrate silicon9 It is possible to fabricate a capacit ive device with silicon dioxide as the dielectric mater ia l by therm-al ly oxidizing silicon at high temperatures. This paper describes the results of physical measure-ments made on the dielectric film, presents new dielectric measurements on the metal-s i l icon di-oxide-si l icon system, and gives a qual i tat ive ex-p lanat ion for the shape of the observed dielectri