Abstract — The design and performance of a solid state video camera, tolerant to> 5.3 Mrd(Si), is described. The camera uses a commercially available CMOS active pixel sensor (APS) and is suitable for high total dose applications in the nuclear industry. Keywords—APS; CMOS; imager; nuclear; camera; video; sensor; radiation I
This article presents a radiation hardened active pixel sensor implemented in a standard 0.35 mu m C...
International audienceThe Total Ionizing Dose (TID) hardness of digital color Camera-on-a-Chip (CoC)...
A wafer scale CMOS Active Pixel Sensor has been designed employing design techniques of transistor e...
International audienceThere is an increasing interest in developing cameras for surveillance systems...
In this paper, we present the availability of an active pixel sensor (APS) with four transistors (4T...
International audienceA Radiation Hard CMOS Active Pixel Image Sensor has been designed, manufacture...
The aim of this work is to design and characterize a fully radiation-hardened-by-design CMOS Image ...
In this paper an overview on the process of designing a radiation tolerant surveillance camera from ...
International audienceThe radiation hardness of a radiation-hardened-by-design CMOS Image Sensor is ...
CMOS Monolithic Active Pixel Sensors for charged particle tracking (CPS) form are ultra-light and hi...
The radiation hardness of a radiation-hardened-by-design CMOS Image Sensor is validated up to severa...
International audienceThe impact of the manufacturing process on the radiation induced degradation e...
CMOS image sensors are nowadays extensively considered for several space applications. Mission requi...
CMOS Pixel Sensors are being developed since a few years to equip vertex detectors for future high-e...
This article presents a radiation hardened active pixel sensor implemented in a standard 0.35 mu m C...
International audienceThe Total Ionizing Dose (TID) hardness of digital color Camera-on-a-Chip (CoC)...
A wafer scale CMOS Active Pixel Sensor has been designed employing design techniques of transistor e...
International audienceThere is an increasing interest in developing cameras for surveillance systems...
In this paper, we present the availability of an active pixel sensor (APS) with four transistors (4T...
International audienceA Radiation Hard CMOS Active Pixel Image Sensor has been designed, manufacture...
The aim of this work is to design and characterize a fully radiation-hardened-by-design CMOS Image ...
In this paper an overview on the process of designing a radiation tolerant surveillance camera from ...
International audienceThe radiation hardness of a radiation-hardened-by-design CMOS Image Sensor is ...
CMOS Monolithic Active Pixel Sensors for charged particle tracking (CPS) form are ultra-light and hi...
The radiation hardness of a radiation-hardened-by-design CMOS Image Sensor is validated up to severa...
International audienceThe impact of the manufacturing process on the radiation induced degradation e...
CMOS image sensors are nowadays extensively considered for several space applications. Mission requi...
CMOS Pixel Sensors are being developed since a few years to equip vertex detectors for future high-e...
This article presents a radiation hardened active pixel sensor implemented in a standard 0.35 mu m C...
International audienceThe Total Ionizing Dose (TID) hardness of digital color Camera-on-a-Chip (CoC)...
A wafer scale CMOS Active Pixel Sensor has been designed employing design techniques of transistor e...
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