Add to ORKGAbstract-A numerical study has been carried out to extract bulk recombination lifetime of minority carrier in Fe contaminated p-type compensated silicon solar cell. In this paper it has demonstrated that the compensation will lead to a substantial increase in both intrinsic and Shockley-Read-Hall (SRH) lifetime for minority carrier in p-Si. The utmost importance of this result is the control of compensation level that will facilitate strong improvements in silicon solar cell efficiencies
In this contribution the minority carrier lifetime in the electrically active epitaxial layer of cry...
Impedance spectroscopy (at forward bias and under illumination) of solar cells comprised thin hydrog...
Minority carrier lifetime is the most crucial material parameter for the performance of a silicon so...
This paper presents the analysis and calculation of minority carrier lifetime in silicon solar cell ...
International audienceIn this paper the minority carrier lifetime (tau) in the base region of an n(+...
ABSTRACT: This study is devoted to the variations of the carrier lifetime and minority carrier diffu...
© 2017 Author(s). In p-type multicrystalline silicon solar cells, carrier-induced degradation (CID) ...
The open-circuit voltage of a silicon solar cell is well known to be directly related to the effecti...
Recombination lifetimes of multicrystalline silicon solar cell precursors have been measured experim...
Deliberate compensation of crystalline silicon results in a decrease in the equilibrium carrier conc...
In this paper we measure, spatially resolved, the efficiency potential of multicrystalline material....
Recombination lifetimes of multicrystalline silicon solar cell precursors have been measured experim...
The buried contact solar cell is produced in industry using monocrystalline silicon. The low shading...
The experimental variation of wafer thickness and resistivity at device level combined with a compre...
Single-crystal Czochralski silicon used for photovoltaics is typically supersaturated with interstit...
In this contribution the minority carrier lifetime in the electrically active epitaxial layer of cry...
Impedance spectroscopy (at forward bias and under illumination) of solar cells comprised thin hydrog...
Minority carrier lifetime is the most crucial material parameter for the performance of a silicon so...
This paper presents the analysis and calculation of minority carrier lifetime in silicon solar cell ...
International audienceIn this paper the minority carrier lifetime (tau) in the base region of an n(+...
ABSTRACT: This study is devoted to the variations of the carrier lifetime and minority carrier diffu...
© 2017 Author(s). In p-type multicrystalline silicon solar cells, carrier-induced degradation (CID) ...
The open-circuit voltage of a silicon solar cell is well known to be directly related to the effecti...
Recombination lifetimes of multicrystalline silicon solar cell precursors have been measured experim...
Deliberate compensation of crystalline silicon results in a decrease in the equilibrium carrier conc...
In this paper we measure, spatially resolved, the efficiency potential of multicrystalline material....
Recombination lifetimes of multicrystalline silicon solar cell precursors have been measured experim...
The buried contact solar cell is produced in industry using monocrystalline silicon. The low shading...
The experimental variation of wafer thickness and resistivity at device level combined with a compre...
Single-crystal Czochralski silicon used for photovoltaics is typically supersaturated with interstit...
In this contribution the minority carrier lifetime in the electrically active epitaxial layer of cry...
Impedance spectroscopy (at forward bias and under illumination) of solar cells comprised thin hydrog...
Minority carrier lifetime is the most crucial material parameter for the performance of a silicon so...