Silicon wafer cleaning is the most frequently applied processing step in the integrated circuit manufacturing sequence. This process is intended to remove several different types of contaminants, among them particles, metallics, and organics. It has been estimated, however, that over fifty percent of yield losses in integrated circuit manufacturing are caused by contamination remaining on the surface of silicon wafers after cleaning. It is the object of this article to document the effects of using improved, ultrahigh purity chemicals on silicon wafer surfaces as measured by total reflection x-ray fluorescence, TXRF. During this study, silicon samples were cleaned with standard grade chemicals and ultrahigh purity chemicals, and metallic im...
The ~4Cu monitor method was used to study the impact of DI H20 rinses on the cleaning efficiency of ...
We describe here an analytical technique suitable for fast and reliable determination of surface met...
AbstractThe production of high efficiency PV cells requires a strict control on metal contamination ...
The impact of organic contamination on wafer surfaces on the functionality of nanostructures and adv...
Metal contamination levels are a growing concern in integrated circuit manufacturing because they de...
To evaluate the reliability of ToF-SIMS to quantitatively detect trace metals on silicon wafers, pur...
Semiconductor devices are built using hyperpure silicon and very controlled levels of doping to crea...
Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2...
As semiconductor device geometries continue to shrink, trace volatile organic contamination adsorbin...
Contamination from process materials is an important consideration for the reduction of wafer contam...
As a wafer cleaning process, RCA (Radio Corporation of America) cleaning is mainly used. However, RC...
SR-TXRF spectroscopy is one of the powerful methods of measuring surface and near surface wafer cont...
Synchrotron radiation based total external reflection x-ray fluorescence spectroscopy (TXRF) is now ...
It is crucial to make Si wafer surfaces ultraclcan in order to realize low-temperature processing an...
Wafer fabrication for integrated circuit is one of the most complicated process in semiconductor man...
The ~4Cu monitor method was used to study the impact of DI H20 rinses on the cleaning efficiency of ...
We describe here an analytical technique suitable for fast and reliable determination of surface met...
AbstractThe production of high efficiency PV cells requires a strict control on metal contamination ...
The impact of organic contamination on wafer surfaces on the functionality of nanostructures and adv...
Metal contamination levels are a growing concern in integrated circuit manufacturing because they de...
To evaluate the reliability of ToF-SIMS to quantitatively detect trace metals on silicon wafers, pur...
Semiconductor devices are built using hyperpure silicon and very controlled levels of doping to crea...
Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2...
As semiconductor device geometries continue to shrink, trace volatile organic contamination adsorbin...
Contamination from process materials is an important consideration for the reduction of wafer contam...
As a wafer cleaning process, RCA (Radio Corporation of America) cleaning is mainly used. However, RC...
SR-TXRF spectroscopy is one of the powerful methods of measuring surface and near surface wafer cont...
Synchrotron radiation based total external reflection x-ray fluorescence spectroscopy (TXRF) is now ...
It is crucial to make Si wafer surfaces ultraclcan in order to realize low-temperature processing an...
Wafer fabrication for integrated circuit is one of the most complicated process in semiconductor man...
The ~4Cu monitor method was used to study the impact of DI H20 rinses on the cleaning efficiency of ...
We describe here an analytical technique suitable for fast and reliable determination of surface met...
AbstractThe production of high efficiency PV cells requires a strict control on metal contamination ...