1 WAVELENGTH DEPENDENCE OF TRANSVERSE MODE COUPLING WITH/WITHOUT E-BLOCK OF GAN LASER CAVITY By

Transverse mode wavelength dependence in the GaN laser cavity is a new topic. Modal analysis simulations are run to optimize the blue Gallium Nitride (GaN) based laser diode with a wavelength of 400, 430, and 460nm. It is shown that the optical confinement factor (OCF) has a strong dependence upon wavelength of emission and e-block thickness. The OCF can be changed from 4.9 % at a 460nm wavelength to 7.6 % at 400nm, which is a 55 % difference. The effect of adding an electron block layer of different widths is also investigated with results showing that an electron block layer can change optical confinement by 14 % at 460nm wavelength and 13 % at 400nm wavelength. The bottom n-GaN layer thickness is optimized between 0.1 and 7µm. It is found that a thin buffer layer improves optical mode distribution by reducing the ghost mode