A Three Dimensional Mesh Generation Method with Precedent Triangulation of Boundary

Abs t rac t ’ A three dimensional mesh generation method in which triangulation of domain bound-ary is performed first is desirable since requirements for mesh around the boundary can be handled more easily. Based on this method, a mesh generator for 3D device simulator is developed, which can form layered mesh along planar boundary. Practicality of this simulator is demonstrated through analysis of electrical characteristics of MOS devices. 1 In t roduc t ion For solving partial differential equations handled in semiconductor process and device simulators, con-trol volume method (box integration method) is widely used as descretization scheme. In order to avoid numerical instability in matrix solver, control volume method requires discretization mesh that satisfies De-launay criterion, i.e. circumsphere of any mesh element does not contain any mesh point. In addition, near boundaries and interfaces of analysis domain, other conditions as stated below should be taken into account. 1. Descretization mesh should be “well-fitted ” to the boundary, i.e. not only the mesh is conformed to the boundary, but also the circumcenter of the mesh element and circumcenter of faces of the mesh element lie in the same domain that the element belongs to. This condition should be satisfied as long as control volume method is used as discretization to avoid negative cross section associated wit