In this paper, we present an analysis of gallium nitride (GaN) quantum-well (QW) laser diode (LD) by numerical simulation. Here we discuss three aspects that are crucial to our analysis. First, the transverse mode pattern is studied, and our current GaN diode laser structure is discussed with optical waveguide mode analysis. Then we compare the QW design of the laser and maximize laser modal gain. Finally, we report the influence of the electron block (e-block) layer on lasing performance of our design
We analyze the performance of a set of gallium nitride based laser diodes emitting ultraviolet light...
[[abstract]]Theoretical analysis for different active layer structures is performed to minimize the ...
Abstract—Theoretical analysis for different active layer struc-tures is performed to minimize the la...
In this paper, we present an analysis of gallium nitride (GaN) quantum-well (QW) laser diode (LD) by...
We investigate the transverse mode pattern in GaN quantum-well (QW) laser diode (LD) by nu numerical...
We investigate the transverse mode pattern in GaN quantum-well (QW) laser diode (LD) by numerical ca...
We investigate the transverse mode pattern in GaN quantum-well (QW) laser diode (LD) by numerical ca...
We have investigated the transverse mode pattern and the optical field confinement factor of gallium...
Transverse mode wavelength dependence in the GaN laser cavity is a new topic. Modal analysis simulat...
This paper focuses on the optical mode analysis of laser diodes to improve light emission. Under the...
Transverse mode wavelength dependence in the gallium nitride (GaN) laser cavity is a new topic. Moda...
Quantum wells are effective potential wells in which an extremely thin semiconductor layer with a na...
A wave-optical model that is coupled to a microscopic gain theory is used to investigate lateral mod...
Abstract: Transverse mode wavelength dependence in the gallium nitride (GaN) laser cavity is a new t...
For the quaternary and ternary alloy as active region of LDs, the key parameters including threshold...
We analyze the performance of a set of gallium nitride based laser diodes emitting ultraviolet light...
[[abstract]]Theoretical analysis for different active layer structures is performed to minimize the ...
Abstract—Theoretical analysis for different active layer struc-tures is performed to minimize the la...
In this paper, we present an analysis of gallium nitride (GaN) quantum-well (QW) laser diode (LD) by...
We investigate the transverse mode pattern in GaN quantum-well (QW) laser diode (LD) by nu numerical...
We investigate the transverse mode pattern in GaN quantum-well (QW) laser diode (LD) by numerical ca...
We investigate the transverse mode pattern in GaN quantum-well (QW) laser diode (LD) by numerical ca...
We have investigated the transverse mode pattern and the optical field confinement factor of gallium...
Transverse mode wavelength dependence in the GaN laser cavity is a new topic. Modal analysis simulat...
This paper focuses on the optical mode analysis of laser diodes to improve light emission. Under the...
Transverse mode wavelength dependence in the gallium nitride (GaN) laser cavity is a new topic. Moda...
Quantum wells are effective potential wells in which an extremely thin semiconductor layer with a na...
A wave-optical model that is coupled to a microscopic gain theory is used to investigate lateral mod...
Abstract: Transverse mode wavelength dependence in the gallium nitride (GaN) laser cavity is a new t...
For the quaternary and ternary alloy as active region of LDs, the key parameters including threshold...
We analyze the performance of a set of gallium nitride based laser diodes emitting ultraviolet light...
[[abstract]]Theoretical analysis for different active layer structures is performed to minimize the ...
Abstract—Theoretical analysis for different active layer struc-tures is performed to minimize the la...