TECHNICAL PAPERS SOLID-STATE SCIENCE AND TECHNOLOGY Reliabilily Evaluation of Manufacturing Processes for Bipolar and MOS Devices on Silicon-on-Diamond Materials

The chemical stability of polycrystalline diamond subjected to common silicon device integrated circuit process steps has been investigated using Raman spectroscopy, scanning electron microscopy, I-V, and capacitance-voltage. Wet chem-ical process steps such as RCA cleaning, KOH etching, and aluminum etching were performed without significant degra-dation of the diamond. No contamination, as judged from electrical data, of reference metal oxide semiconductor capac-itors from the diamond was seen during furnace treatments. Diamond was found to withstand annealing at 950°C without electrical degradation. Patterning of diamond was demonstrated and utilized in manufacturing of test structures. Methods have been found to protect the diamond at temperatures up to 1100°C during thermal oxidation of adjacent sil-icon. Capping layers consisting of silicon nitride, silicon nitride on top of chemically vapor deposited oxide and polysil-icon were found to protect diamond during thermal oxidation. A silicon-on-diamond wafer process based on process steps investigated in this paper is proposed