Vapor Phase Epitaxial Growth of ZnSe Films Using Metallic Zn and Metallic Se

Single crystal layers of ZnSe have been epitaxially grown on GaAs and sapphire substrates using metallic Zn and Se. A nozzle for the Se flow was placed at about 1 cm in front of the substrate, and this arrangement resulted in much less Se consumption than in the case when the nozzle was further separated from the substrate. The epitaxial conditions were investigated as a function of the source and substrate temperatures. When the substrate temperature and one of the source temperatures were fixed, the growth rate increased with the other source temperature and then saturated. Below the saturation point, the growth rate is proportional to the flow rate and the vapor pressure of each source material. Dependence on substrate temperature of growth rate is shown to be surface-controlled phenomenon below 770~ and is one of mass transfer controlled phenomena bove 770 ~ The epitaxial growth on GaAs substrates occurred in the substrate temperature range of 650~176 with a growth rate ranging from 1 to 30 ~m/hr. The resistivit