Add to ORKGThe kinetics of the reaction of silicon with solutions of hydrofluoric acid, nitric acid, and acetic acid are reported as a function of the composition of the etchant. The system qualitatively behaves in the same manner as the system hydrofluoric acid, nitric acid, and water, which as been reported previously. Quantitatively, the acetic acid diluted system shows a much higher tolerance for the di luent than does the water diluted system. The greater tolerance for acetic acid has been explained on the basis of the lesser ionization of nitric acid in acetic acid than in water. The reaction mechanisms postulated for the water diluted system have been found to apply equally well to the acetic acid di-luted system. Acetic acid is used widely as ...
Anisotropic etching of silicon is achieved in the presence of ultra-violet exposure in a solution c...
AbstractStructuring of thin film silicon nitride (SiN) is often done by etching the thin film using ...
AbstractStructuring of thin film silicon nitride (SiN) is often done by etching the thin film using ...
The kinetics of the etching of silicon in the system HF, HNO~, and H~O was studied as a function of ...
The different equilibria in HF and HF /HCI solutions are examined and the etching reaction of S iQ i...
The etching rate of silicon in fluoride-containing solutions was found to show a remarkable pH depen...
The etching of sil icon in HNO3-HF based systems proceeds by a sequen-tial oxidation-followed-by-dis...
Ternary mixtures of water, amine, and complexing agent have been found to etch silicon. The silicon ...
Increased etch rate for implanted oxide with boron, phosphorus, arsenic, and argon is characterized ...
The high selectivity in etching of dielectric films over crystalline silicon (c-Si) by hydrofluoric ...
Anisotropic wet bulk micromachining is one of the main techniques used in microelectromechanical sys...
The photoelectrochemical oxidation and dissolution of silicon (Si) is performed in the absence of wa...
Solution based on ammonium hydroxide and water were investigated for anisotropic etching of monocrys...
The mechan ism and kinetics of silicon etching w i th HCI /Hz mixtures in low pressure condit ions i...
In this work a methodology and metrology for the Si substrate loss characterization during cleaning ...
Anisotropic etching of silicon is achieved in the presence of ultra-violet exposure in a solution c...
AbstractStructuring of thin film silicon nitride (SiN) is often done by etching the thin film using ...
AbstractStructuring of thin film silicon nitride (SiN) is often done by etching the thin film using ...
The kinetics of the etching of silicon in the system HF, HNO~, and H~O was studied as a function of ...
The different equilibria in HF and HF /HCI solutions are examined and the etching reaction of S iQ i...
The etching rate of silicon in fluoride-containing solutions was found to show a remarkable pH depen...
The etching of sil icon in HNO3-HF based systems proceeds by a sequen-tial oxidation-followed-by-dis...
Ternary mixtures of water, amine, and complexing agent have been found to etch silicon. The silicon ...
Increased etch rate for implanted oxide with boron, phosphorus, arsenic, and argon is characterized ...
The high selectivity in etching of dielectric films over crystalline silicon (c-Si) by hydrofluoric ...
Anisotropic wet bulk micromachining is one of the main techniques used in microelectromechanical sys...
The photoelectrochemical oxidation and dissolution of silicon (Si) is performed in the absence of wa...
Solution based on ammonium hydroxide and water were investigated for anisotropic etching of monocrys...
The mechan ism and kinetics of silicon etching w i th HCI /Hz mixtures in low pressure condit ions i...
In this work a methodology and metrology for the Si substrate loss characterization during cleaning ...
Anisotropic etching of silicon is achieved in the presence of ultra-violet exposure in a solution c...
AbstractStructuring of thin film silicon nitride (SiN) is often done by etching the thin film using ...
AbstractStructuring of thin film silicon nitride (SiN) is often done by etching the thin film using ...