Journal of The Electrochemical Society, 158 (12) H1233-H1237 (2011) H1233 0013-4651/2011/158(12)/H1233/5/$28.00 © The Electrochemical Society The Investigation on Surface Blistering of Ge Implanted by Hydrogen under the Low Temperature Annealing

cm−2 with 60 KeV, and germanium surface blistering phenomenon, raised by subsequent annealing in air in the temperature regions (200–250◦C for 1 × 1017 cm−2 and 250–350◦C for 3 × 1016 cm−2 and 5 × 1016 cm−2) for distinct durations, was studied. In Arrhenius plots that reflects the onset blistering time of annealing as a function of annealing temperature, there is a break point separated the each plot into two parts with distinct activation energies (∼2.1 eV and ∼0.6 eV) for 3 × 1016 cm−2 and 5 × 1016 cm−2 doses. The break point seems to be similar to other knownmaterials but the opposite turning direction of the straight-line is completely different from other known materials because it is possible to derive from the diversity of defect-hydrogen complexes in germanium. On the other hand, the simple straight-line in Arrhenius plot is generated in the temperature range from 200–250◦C with 1.57 eV activation energy as increasing H-implanted dose up to 1 × 1017 cm−2. The phenomenon of modifying blistering activation energy with H-implanted dose may be due to the mergence through the low and high activation energy because of competitive desorption of the defect-hydrogen complexes. The critical size of blisters to be exploded into craters increases with the enhancement of H-implanted dose and the rectangle-like periphery of the craters is obviously formed