JSS FOCUS ISSUE ON ADVANCED INTERCONNECTS: MATERIALS, PROCESSING, AND RELIABILITY Effect of Porogen Incorporation on Pore Morphology of Low-k SiCxNy Films Prepared Using PECVD

Low-k porous SiCxNy films were prepared through plasma-enhanced chemical vapor deposition, using 1,3,5-trimethyl-1,3,5-trivinylcyclotrisilazane (VSZ) as the matrix precursor and epoxycyclohexane (ECH) as a porogen. The effects of porogen loading and deposition temperature on porogen incorporation, pore morphology, and the properties of porous SiCxNy films were examined. In addition, the impact of film shrinkage and the corresponding nanopore structures after annealing were studied. The porosity of films deposited at 100◦C increased from 1.8 % to 19.8 % when ECH loading increased to 30%, above which the porosity remained nearly constant because of high film shrinkage. The pore size decreased slightly from 4.1 to 3.7 nm when ECH loading increased to 30%, above which the pores became larger and were broadly distributed. By contrast, increasing deposition temperature at 20 % ECH loading decreased porogen incorporation and increased film density. The porosities and pore size of films decreased, respectively, when the deposition temperature increased. A short-range ordering of pores was observed only at low deposition temperatures be-cause the N-Si-C cross-linked structures and organic phase were present. Optimized processing parameters facilitated the fabrication of low-k porous SiCxNy films exhibiting 19.8 % porosity, 3.7-nm pores, a k value of 3.18, and an elastic modulus of 7.7 GPa. © The Author(s) 2014. Published by ECS. This is an open access article distributed under the terms of the Creative Common