Low Leakage Reliability Characterization Methodology for

Abstract- A low leakage characterization technique for the lateral profiling of interface and oxide traps in a 12A-16A range gate oxide CMOS devices has heen demonstrated. The approach being taken includes an incremental frequency Charge-Pumping(1FCP) measurement and a neutralization procedure such that interface and oxide traps can be separated. The most critical steps are the elimination of leakage current during measurement and a neutralization procedure, which enables accurate determination of interface and oxide traps. This method has been demonstrated successfully for an advanced sub-l00nm CMOS devices. As an important merit for its application, evaluations of HC reliability and NBTI effect have also been demonstrated. Evaluations of gate oxide qualities with plasma nitridation in both n- and p-MOSFET reliabilities have been properly described based on the current analysis technique. 1