Electrical Characteristics of Near-Interface Traps in 3C-SiC Metal–Oxide–Semiconductor Capacitors

Abstract—Deep-depletion capacitance measurements on n-type 3C-SiC MOS capacitors that exhibit both field and temperature dependencies are presented and analyzed in this letter. A two-step electron-detrapping process, in which electrons first tunnel from neutral near-interface traps to interface traps and are subse-quently thermally emitted into the silicon carbide conduction band, is identified as the responsible mechanism. A mathematical model is proposed for this two-step detrapping process. Index Terms—Capacitance transients, MOS capacitors, near-interface traps, 3C-SiC. I