Molecular beam epitaxy of GaAs and InP with gas source for As and P

Arsine and phosphine were decomposed in a high temperature l ak-source to provide As2 and P2 molecular beams for molecular beam epitaxy of GaAs and InP. Reasonable growth rates (0.5-1.5 ~m/hr) were achieved for both semiconductors. The studies demonstrated that with this method, MBE of GaAs can be done with the substrate temperature as high as 700 ~ The maxi-mum growth temperature obtained for InP was approximately 600 ~ A rea-sonable increase in leak rate at the source should permit GaAs-tVIBE at 750~ and InP-MBE at 650~ Conventional molecular beam epitaxy of I I I-V com-pounds is usually done with a source for the group V element hat consists of a condensed phase in an effu-sion oven (1). Usually the condensed phase is the solid element itself, although many studies have been done in which it is a solution of the group V element