Add to ORKGThe understanding of the physical mechanisms responsible of charge transport and degradation in high-κ stacks is fundamental for the optimization of advanced logic (MOSFETs) and memory (RRAM, DRAM) devices. In this paper, we present a comprehensive physical model describing the charge transport and the degradation/breakdown processes in the HfO2 layer. This model allows gaining quantitative insights into the physics governing leakage current and degradation processes in HfO2 stacks, reproducing gate current and TDDB statistics
Method for characterization of electrical and trapping properties of multilayered high permittivity ...
We propose a model describing the operations of hafnium oxide-based resistive random access memory (...
We present a quantitative physical model describing degradation of poly-crystalline HfO2 dielectric...
The understanding of the physical mechanisms responsible of charge transport and degradation in high...
HfO2 is currently used in the gate stacks of CMOS logic devices and is widely investigated for its p...
In this paper we discuss the physical mechanisms governing the charge transport inside hafnium based...
In this paper we present a comprehensive physical model that describes charge transport and degradat...
High-κ Oxide Defects in the MOSFET gate stack and RRAM cell severely impact the device reliability. ...
In this paper we investigate the physical mechanisms governing operations in HfOx RRAM devices. Form...
This paper presents a novel physical description of the forming process in HfO2-based resistive swit...
We combine experiments and simulations to investigate leakage current and breakdown (BD) in stoichio...
We present a quantitative physical model describingthe current evolution due to the formation of a c...
"Increased power dissipation is one of the major issue for today’s chip designers. Gate leakage acro...
We present a multiscale modeling platform that exploits ab-initio calculation results and a material...
In this paper, we investigate the characteristics of the defects responsible for the leakage current...
Method for characterization of electrical and trapping properties of multilayered high permittivity ...
We propose a model describing the operations of hafnium oxide-based resistive random access memory (...
We present a quantitative physical model describing degradation of poly-crystalline HfO2 dielectric...
The understanding of the physical mechanisms responsible of charge transport and degradation in high...
HfO2 is currently used in the gate stacks of CMOS logic devices and is widely investigated for its p...
In this paper we discuss the physical mechanisms governing the charge transport inside hafnium based...
In this paper we present a comprehensive physical model that describes charge transport and degradat...
High-κ Oxide Defects in the MOSFET gate stack and RRAM cell severely impact the device reliability. ...
In this paper we investigate the physical mechanisms governing operations in HfOx RRAM devices. Form...
This paper presents a novel physical description of the forming process in HfO2-based resistive swit...
We combine experiments and simulations to investigate leakage current and breakdown (BD) in stoichio...
We present a quantitative physical model describingthe current evolution due to the formation of a c...
"Increased power dissipation is one of the major issue for today’s chip designers. Gate leakage acro...
We present a multiscale modeling platform that exploits ab-initio calculation results and a material...
In this paper, we investigate the characteristics of the defects responsible for the leakage current...
Method for characterization of electrical and trapping properties of multilayered high permittivity ...
We propose a model describing the operations of hafnium oxide-based resistive random access memory (...
We present a quantitative physical model describing degradation of poly-crystalline HfO2 dielectric...