Actuation enhancement for AlN piezoelectric cantilevers is achieved by coating slender AlN beams with a thin PECVD silicon nitride (SiN) layer. Very good linearity and high deflection, up to 19 nm/V of actuation deflection for 200 μm long cantilevers, at quasi-static mode, is obtained for a 500 nm SiN top layer. This value is three times larger than our previously reported value for cantilevers without the SiN layer. The achieved results make these cantilevers, fabricated in a CMOS compatible process, very promising micro/nano actuators. © 2012 Published by Elsevier Ltd
Advances in the areas of wireless technology and low-power electronics stimulated extensively resear...
A post-complementary metal oxide semiconductor (CMOS) compatible microfabrication process of piezoel...
In this work we present for the first time the fabrication and the characterization of flexible micr...
Actuation enhancement for AlN piezoelectric cantilevers is achieved by coating slender AlN beams wit...
AbstractActuation enhancement for AlN piezoelectric cantilevers is achieved by coating slender AlN b...
Very good crystallinity and highly c-axis-oriented aluminum nitride (AlN) thin films are sputtered o...
This paper reports the first implementation of ultra thin (100 nm) Aluminum Nitride (AlN) piezoelect...
This letter reports the implementation of ultrathin (100 nm) aluminum nitride (AlN) piezoelectric la...
International audienceThe subject of this paper is the use of aluminum nitride (AlN) as an actuation...
This report shows different fabrication procedures followed to obtain piezoelectric microcantilevers...
This paper presents a new fabrication technology for conducting AFM cantilevers with integrated AlN-...
The aim of this work is to simulate and optically characterize the piezoelectric performance of comp...
This paper focuses on the design and fabrication of piezoelectric cantilevers and on the analysis of...
Aluminum nitride (AlN) is a promising piezoelectric material suitable for full CMOS compatible MEMS ...
Piezoelectric micromirrors with aluminum nitride (AlN) and aluminum scandium nitride (Al0.68Sc0.32N)...
Advances in the areas of wireless technology and low-power electronics stimulated extensively resear...
A post-complementary metal oxide semiconductor (CMOS) compatible microfabrication process of piezoel...
In this work we present for the first time the fabrication and the characterization of flexible micr...
Actuation enhancement for AlN piezoelectric cantilevers is achieved by coating slender AlN beams wit...
AbstractActuation enhancement for AlN piezoelectric cantilevers is achieved by coating slender AlN b...
Very good crystallinity and highly c-axis-oriented aluminum nitride (AlN) thin films are sputtered o...
This paper reports the first implementation of ultra thin (100 nm) Aluminum Nitride (AlN) piezoelect...
This letter reports the implementation of ultrathin (100 nm) aluminum nitride (AlN) piezoelectric la...
International audienceThe subject of this paper is the use of aluminum nitride (AlN) as an actuation...
This report shows different fabrication procedures followed to obtain piezoelectric microcantilevers...
This paper presents a new fabrication technology for conducting AFM cantilevers with integrated AlN-...
The aim of this work is to simulate and optically characterize the piezoelectric performance of comp...
This paper focuses on the design and fabrication of piezoelectric cantilevers and on the analysis of...
Aluminum nitride (AlN) is a promising piezoelectric material suitable for full CMOS compatible MEMS ...
Piezoelectric micromirrors with aluminum nitride (AlN) and aluminum scandium nitride (Al0.68Sc0.32N)...
Advances in the areas of wireless technology and low-power electronics stimulated extensively resear...
A post-complementary metal oxide semiconductor (CMOS) compatible microfabrication process of piezoel...
In this work we present for the first time the fabrication and the characterization of flexible micr...