Add to ORKGFinFET is a promising device candidate for 14nm node CMOS technology. We have developed FinFET device showing superior short channel control at 25nm gate length. This FinFET device featuring gate first high-k/metal gate and merged Epi source/drain process. Key process improvements to resolve the FinFET unique challenges are presented. High drive currents have been obtained for both nFET and pFET. All these results show FinFET is the most promising candidate for 14nm node CMOS technology
10nm logic technology using Si FinFET is developed for low power and high performance applications. ...
Scaling of the MOSFET face greater challenge by extreme power density due to leakage current in ultr...
This study aims to understand the potential of bulk FinFET technology from the perspective of sub-an...
Abstract — A FinFET, a novel double-gate device structure is capable of scaling well into the nanoel...
The FinFET transistor structure assures to rejuvenate the chip industry by rescuing it from the shor...
Dual gate MOSFET structures such as FinFETs are widely regarded as the most promising option for con...
FinFET technology is prone to suffer from line edge roughness (LER)-based V-T variation with scaling...
Planar Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) have been leading the semiconduc...
This paper describes the implementation of a high performance FinFET-based 14-nm CMOS Technology in ...
Semiconductor industry greatly depends on CMOS technology and now needs competent technology with ha...
The Semiconductor industry has excelled the electronics market in providing high speed, power effici...
Since Moore’s law driven scaling of planar MOSFETs faces formidable challenges in the nanometer regi...
Abstract—FinFET technology has been proposed as a promising alternative for deep sub-micron CMOS tec...
Superior scalability and better gate-to-channel capacitive coupling can be achieved with adopting ga...
The high-k is needed to replace SiO2 as the gate dielectric to reduce the gate leakage current. The ...
10nm logic technology using Si FinFET is developed for low power and high performance applications. ...
Scaling of the MOSFET face greater challenge by extreme power density due to leakage current in ultr...
This study aims to understand the potential of bulk FinFET technology from the perspective of sub-an...
Abstract — A FinFET, a novel double-gate device structure is capable of scaling well into the nanoel...
The FinFET transistor structure assures to rejuvenate the chip industry by rescuing it from the shor...
Dual gate MOSFET structures such as FinFETs are widely regarded as the most promising option for con...
FinFET technology is prone to suffer from line edge roughness (LER)-based V-T variation with scaling...
Planar Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) have been leading the semiconduc...
This paper describes the implementation of a high performance FinFET-based 14-nm CMOS Technology in ...
Semiconductor industry greatly depends on CMOS technology and now needs competent technology with ha...
The Semiconductor industry has excelled the electronics market in providing high speed, power effici...
Since Moore’s law driven scaling of planar MOSFETs faces formidable challenges in the nanometer regi...
Abstract—FinFET technology has been proposed as a promising alternative for deep sub-micron CMOS tec...
Superior scalability and better gate-to-channel capacitive coupling can be achieved with adopting ga...
The high-k is needed to replace SiO2 as the gate dielectric to reduce the gate leakage current. The ...
10nm logic technology using Si FinFET is developed for low power and high performance applications. ...
Scaling of the MOSFET face greater challenge by extreme power density due to leakage current in ultr...
This study aims to understand the potential of bulk FinFET technology from the perspective of sub-an...