First InP/InGaAs PNP HBT grown by metal organic chemical vapor deposition

The MOCVD growth of InP/InGaAs PNP HBT layers and the successful fabrication and operation at high frequency of devices made on such layers are reported for the first time. The PNP HBTs employed a zinc-doped-InP layer as emitter while the base was made with a 500A thick n-type InGaAs layer doped at 5x10 ' cm '. Microwave measurements indicated fT of more than 11 GHz at JC=8.25x1O4 Akm2 for these MOCVD-grown InP/InGaAs PNP HBTs