Add to ORKGDamage from ion implantation i Si can lead to dislocation formation during subsequent thermal annealing. These dislocations may sharply degrade device performance, making it desireable to suppress their formation. In this paper the criterion for dislocation formation is reviewed. Knowing this criterion suggests several ways to avoid dislocation formation in high dose implants for device applications. 1
A new understanding of the damage formation mechanisms in Si is developed and investigated over an e...
High-resolution X-ray diffraction (HR-XRD) was investigated as a possible technique for the qualitat...
This dissertation considers the influences of thermal cycling on process induced dislocations in sin...
Damage from ion implantation in Si can lead to dislocation formation during subsequent thermal annea...
Annealing of crystal damage from ion implantation may restflt in dislocation formation. Here we stud...
We have studied the influence of the ion species, ion energy, fluence, irradiation temperature and p...
Ion implantation is used at several critical stages of Si integrated circuit manufacturing. The auth...
A study of the relative thermal stability of perfect and faulted dislocation loops formed during ann...
cited By 1International audienceNumerous dislocation loops are often observed in irradiated and nucl...
Implantation of 1.0 MeV 115In in Si results in secondary‐defect formation during subsequent 900 °C a...
A model is presented to account for the effects of ion-induced defects during implantation processin...
International audienceDamage evolution and dopant distribution during nanosecond laser thermal annea...
International audienceA short review of the current understanding and modelling of the formation of ...
Carrier lifetime measurements have been used to characterise residual defects after low-energy impla...
Defects produced by ion implantation in Si and Ge, their evolution upon post-implantation annealing,...
A new understanding of the damage formation mechanisms in Si is developed and investigated over an e...
High-resolution X-ray diffraction (HR-XRD) was investigated as a possible technique for the qualitat...
This dissertation considers the influences of thermal cycling on process induced dislocations in sin...
Damage from ion implantation in Si can lead to dislocation formation during subsequent thermal annea...
Annealing of crystal damage from ion implantation may restflt in dislocation formation. Here we stud...
We have studied the influence of the ion species, ion energy, fluence, irradiation temperature and p...
Ion implantation is used at several critical stages of Si integrated circuit manufacturing. The auth...
A study of the relative thermal stability of perfect and faulted dislocation loops formed during ann...
cited By 1International audienceNumerous dislocation loops are often observed in irradiated and nucl...
Implantation of 1.0 MeV 115In in Si results in secondary‐defect formation during subsequent 900 °C a...
A model is presented to account for the effects of ion-induced defects during implantation processin...
International audienceDamage evolution and dopant distribution during nanosecond laser thermal annea...
International audienceA short review of the current understanding and modelling of the formation of ...
Carrier lifetime measurements have been used to characterise residual defects after low-energy impla...
Defects produced by ion implantation in Si and Ge, their evolution upon post-implantation annealing,...
A new understanding of the damage formation mechanisms in Si is developed and investigated over an e...
High-resolution X-ray diffraction (HR-XRD) was investigated as a possible technique for the qualitat...
This dissertation considers the influences of thermal cycling on process induced dislocations in sin...