of Gate Oxides in SOI MOSFET's by Sequential Hot Electron Stressing of Front/Back Channel " The

Publication date

January 1993

Abstract

Progress this period was accomplished in two sepparate areas, namely hot electron degradation studies of partially and fully depleted transistors, and DLTS analysis to support gettering studies of various SOI SIMOX substrates. The most interesting results on hot carrier degradation are summarized in the attached manuscript "Mechanisms of Hot-Carrier Induced Degradation of SOI(SIMOX) MOSFET's", to be presented at the forthcoming INFOS'93. Interesting results were also obtained on "Successive Charging/Dischargin

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of Gate Oxides in SOI MOSFET's by Sequential Hot Electron Stressing of Front/Back Channel " The

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of Gate Oxides in SOI MOSFET's by Sequential Hot Electron Stressing of Front/Back Channel " The

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