Two developments improve the utilization of flash memory devices in the face of the following limitations: (1) a flash write element (page) differs in size from a flash erase element (block), (2) a block must be erased before its is rewritten, (3) lifetime of a flash memory is typically limited to about 1,000,000 erases, (4) as many as 2 percent of the blocks of a given device may fail before the expected end of its life, and (5) to ensure reliability of reading and writing, power must not be interrupted during minimum specified reading and writing times. The first development comprises interrelated software components that regulate reading, writing, and erasure operations to minimize migration of data and unevenness in wear; perform erasur...
This paper deals with the flash memory reliability in terms of the ionizing radiation effects. In fa...
peer-reviewedWe present second steps in the construction of formal models of NAND flash memory, base...
Memory device whose threshold voltage can be altered reproducibly by applied voltage puls
Nowadays space applications are provided with a processing power absolutely overcoming the one avail...
The purpose of this thesis is to provide device drivers that serve as an interface to several flash ...
Designing a mass-memory device (i.e., a solid-state recorder) is one of the typical issues of missio...
Mission-critical space system applications present several issues: a typical one is the design of a ...
Since the appearance of the solid-state flight data recorders, semiconductor memories are still mode...
Most of the current applications of electronics require non-volatile memories, which can keep stored...
As NASA has evolved it's usage of spaceflight computing, memory applications have followed as well. ...
Mass memories in space systems are evolving from simple tape-like data recorders to complex intellig...
The present invention provides a flash memory management system and method with increased performanc...
Flash memory devices have represented a breakthrough in storage since their inception in the mid-198...
Articles on electronics systems and techniques were presented. The first section is on displays and ...
Radiation requirements and trends. TID: 1) >90% of NASA applications are < 100 krads-Si in piecepart...
This paper deals with the flash memory reliability in terms of the ionizing radiation effects. In fa...
peer-reviewedWe present second steps in the construction of formal models of NAND flash memory, base...
Memory device whose threshold voltage can be altered reproducibly by applied voltage puls
Nowadays space applications are provided with a processing power absolutely overcoming the one avail...
The purpose of this thesis is to provide device drivers that serve as an interface to several flash ...
Designing a mass-memory device (i.e., a solid-state recorder) is one of the typical issues of missio...
Mission-critical space system applications present several issues: a typical one is the design of a ...
Since the appearance of the solid-state flight data recorders, semiconductor memories are still mode...
Most of the current applications of electronics require non-volatile memories, which can keep stored...
As NASA has evolved it's usage of spaceflight computing, memory applications have followed as well. ...
Mass memories in space systems are evolving from simple tape-like data recorders to complex intellig...
The present invention provides a flash memory management system and method with increased performanc...
Flash memory devices have represented a breakthrough in storage since their inception in the mid-198...
Articles on electronics systems and techniques were presented. The first section is on displays and ...
Radiation requirements and trends. TID: 1) >90% of NASA applications are < 100 krads-Si in piecepart...
This paper deals with the flash memory reliability in terms of the ionizing radiation effects. In fa...
peer-reviewedWe present second steps in the construction of formal models of NAND flash memory, base...
Memory device whose threshold voltage can be altered reproducibly by applied voltage puls