Add to ORKGThis paper describes total ionizing dose (TID) test results performed at JPL. Bipolar and BiCMOS device samples were tested exhibiting significant degradation and failures at different irradiation levels. Linear technology which is susceptible to low-dose dependency (ELDRS) exhibited greater damage for devices tested under zero bias condition
To investigate the ELDRS effect in a real space environment, an experiment was designed, launched, a...
The thesis presents data, and fitting equations, that model the degradation of linear small signal p...
Mechanisms that control the response of MOS and bipolar devices to ionizing radiation in the natural...
This paper describes total ionizing dose (TID) test results performed at JPL. Bipolar and BiCMOS dev...
This paper reports recent total ionizing dose (TID) test results obtained at JPL. Several device sam...
Total dose tests of several bipolar linear devices show sensitivity to both dose rate and bias durin...
International audienceThis work investigates MGy Total Ionizing Dose effects in CMOS technologies. L...
In this paper, the total ionizing dose effects on electrostatic discharge (ESD) protection devices a...
The experimentally observed trends in the total-dose gain-degradation response of modern, BiCMOS com...
International audienceTotal ionizing dose (TID) strongly affects the single event transient (SET) se...
Abstract: Problem statement: The amount of ionizing radiation that Bipolar Junction Transistor (BJT)...
International audienceBipolar-based components can exhibit a higher (or lower) degradation when expo...
This presentation provides an overview of Total Ionizing Dose effects in CMOS bulk and SOI technolog...
Total ionizing dose (TID) effects and radiation tests of complex multifunctional Very-large-scale in...
ABSTRACT: The purpose of this work is to briefly discuss the effects of the total ionizing dose (TID...
To investigate the ELDRS effect in a real space environment, an experiment was designed, launched, a...
The thesis presents data, and fitting equations, that model the degradation of linear small signal p...
Mechanisms that control the response of MOS and bipolar devices to ionizing radiation in the natural...
This paper describes total ionizing dose (TID) test results performed at JPL. Bipolar and BiCMOS dev...
This paper reports recent total ionizing dose (TID) test results obtained at JPL. Several device sam...
Total dose tests of several bipolar linear devices show sensitivity to both dose rate and bias durin...
International audienceThis work investigates MGy Total Ionizing Dose effects in CMOS technologies. L...
In this paper, the total ionizing dose effects on electrostatic discharge (ESD) protection devices a...
The experimentally observed trends in the total-dose gain-degradation response of modern, BiCMOS com...
International audienceTotal ionizing dose (TID) strongly affects the single event transient (SET) se...
Abstract: Problem statement: The amount of ionizing radiation that Bipolar Junction Transistor (BJT)...
International audienceBipolar-based components can exhibit a higher (or lower) degradation when expo...
This presentation provides an overview of Total Ionizing Dose effects in CMOS bulk and SOI technolog...
Total ionizing dose (TID) effects and radiation tests of complex multifunctional Very-large-scale in...
ABSTRACT: The purpose of this work is to briefly discuss the effects of the total ionizing dose (TID...
To investigate the ELDRS effect in a real space environment, an experiment was designed, launched, a...
The thesis presents data, and fitting equations, that model the degradation of linear small signal p...
Mechanisms that control the response of MOS and bipolar devices to ionizing radiation in the natural...