Industrial Technologies For III-Nitride-Based Electronics.

The industrial level technologies including molecular beam epitaxy and submicron planar processing are developed to realize novel electron devices based on III-nitride multilayer heterostructures. Wide conditions range available on growth equipment used as well as flexible heterostructure designs allows controlling of device oriented material properties. For microwave applications, thick AlN “templates ” grown at extremely high (up to 1100°C) substrate temperature in conjunction with multilayer transition region design both provide low dislocation density in the order of 108 cm-2. The strong carrier confinement in two-dimensional electron gas for collapse-free transistor operation is provided by placing GaN channel between AlGaN barriers of various Al content, keeping high sheet conductivity of 260-320 Ohm/square. Based on these heterostructures a number of power amplifiers for L-, S-, C- and X-band are realized. For various types of bulk acoustic resonators, stress-controlling technology of AlN/GaN layers having high depth uniformity on Si substrates is also developed