Add to ORKGlinear ID-VGS characteristics of 4H-SiC MOSFETs with various channel doping values (1015 to 5×1018 cm-3) Fig. 1(b) Simulated (circles) and measured (lines) sub-threshold ID-VGS characteristics of 4H-SiC MOSFETs with various channel doping values (1015 to 5×1018 cm-3). Simulated I-V data shows excellent agreement with experiment
The carbon vacancy in 4H-SiC is an important recombination center of the minority carrier and a dire...
The effect of interface state trap density, D-it, on the I-D-V-G characteristics of scaled surface c...
With superior material properties, Silicon carbide (SiC) power devices show great potential for high...
We measure interface trap density near the conduction band edge and fixed oxide charge in commercial...
International audience4H-SiC n-channel lateral MOSFETs were manufactured and characterized electrica...
4H-SiC n-channel lateral MOSFETs were manufactured and characterized electrically by current-voltage...
A numerical simulation study accounting for trap and defect effects on the current-voltage character...
The temperature and carrier-trapping effects on the electrical characteristics of a 4H silicon carbi...
Detailed analysis of a 4H-SiC MOSFET has been carried out by numerically solving the steady state se...
Current power MOSFET devices on Silicon Carbide show a limited inversion channel mobility, which can...
We present detailed physics based numerical models for characterizing 4H-Silicon Carbide lateral MOS...
International audienceThe effects of doping concentration and temperature upon the transport propert...
In recent years, silicon carbide (SiC) became an attractive material and opened new perspectives in ...
International audienceIn this work, electrical properties of lateral n-channel MOSFETs implanted wit...
The effects of doping concentration and temperature upon the transport properties in the channel of ...
The carbon vacancy in 4H-SiC is an important recombination center of the minority carrier and a dire...
The effect of interface state trap density, D-it, on the I-D-V-G characteristics of scaled surface c...
With superior material properties, Silicon carbide (SiC) power devices show great potential for high...
We measure interface trap density near the conduction band edge and fixed oxide charge in commercial...
International audience4H-SiC n-channel lateral MOSFETs were manufactured and characterized electrica...
4H-SiC n-channel lateral MOSFETs were manufactured and characterized electrically by current-voltage...
A numerical simulation study accounting for trap and defect effects on the current-voltage character...
The temperature and carrier-trapping effects on the electrical characteristics of a 4H silicon carbi...
Detailed analysis of a 4H-SiC MOSFET has been carried out by numerically solving the steady state se...
Current power MOSFET devices on Silicon Carbide show a limited inversion channel mobility, which can...
We present detailed physics based numerical models for characterizing 4H-Silicon Carbide lateral MOS...
International audienceThe effects of doping concentration and temperature upon the transport propert...
In recent years, silicon carbide (SiC) became an attractive material and opened new perspectives in ...
International audienceIn this work, electrical properties of lateral n-channel MOSFETs implanted wit...
The effects of doping concentration and temperature upon the transport properties in the channel of ...
The carbon vacancy in 4H-SiC is an important recombination center of the minority carrier and a dire...
The effect of interface state trap density, D-it, on the I-D-V-G characteristics of scaled surface c...
With superior material properties, Silicon carbide (SiC) power devices show great potential for high...