Add to ORKGPassivated gallium arsenide solar photovoltaic cells with high resistance to moisture and oxygen are provided by means of a gallium arsenide phosphide window graded through its thickness from arsenic rich to phosphorus rich
Solar cells are widely used in all near-Earth space missions, with solar panels increasingly getting...
Several oxidation techniques are discussed which have been found to increase the open circuit (V sub...
A heterojunction or Schottky barrier photovoltaic device is described, comprising a conductive base ...
The surface recombination velocity (S sub rec) for bare GaAs is typically as high as 10 to the 6th p...
In order to prevent disastrous global warming the manufacturing capacity of renewable energy power s...
The preference of N on P as the preferred structure rather than the common P on N structure, the des...
The potential of ion implantation as a means of developing gallium arsenide solar cells with high ef...
A Schottky barrier solar cell was described, which consists of a layer of wide band gap semiconducto...
The performance of gallium arsenide solar cells grown on Ge substrates is discussed. In some cases t...
Solar panels made using gallium arsenide (a compound of gallium and arsenic) are an alternative to t...
The method of growing GaAs by pyrolisis of an organic compound of gallium and arsine is well adapted...
A strategic and diverse set of passivation methods for gallium arsenide nanowires wasstudied. Using ...
Gallium arsenide (GaAs) peeled film solar cells were fabricated, by Organo-Metallic Vapor Phase Epit...
A method of fabricating a Schottky barrier solar cell is described. The cell consists of a thin subs...
With experience at increasing production levels, GaAs/Ge cells are proving their effectiveness for s...
Solar cells are widely used in all near-Earth space missions, with solar panels increasingly getting...
Several oxidation techniques are discussed which have been found to increase the open circuit (V sub...
A heterojunction or Schottky barrier photovoltaic device is described, comprising a conductive base ...
The surface recombination velocity (S sub rec) for bare GaAs is typically as high as 10 to the 6th p...
In order to prevent disastrous global warming the manufacturing capacity of renewable energy power s...
The preference of N on P as the preferred structure rather than the common P on N structure, the des...
The potential of ion implantation as a means of developing gallium arsenide solar cells with high ef...
A Schottky barrier solar cell was described, which consists of a layer of wide band gap semiconducto...
The performance of gallium arsenide solar cells grown on Ge substrates is discussed. In some cases t...
Solar panels made using gallium arsenide (a compound of gallium and arsenic) are an alternative to t...
The method of growing GaAs by pyrolisis of an organic compound of gallium and arsine is well adapted...
A strategic and diverse set of passivation methods for gallium arsenide nanowires wasstudied. Using ...
Gallium arsenide (GaAs) peeled film solar cells were fabricated, by Organo-Metallic Vapor Phase Epit...
A method of fabricating a Schottky barrier solar cell is described. The cell consists of a thin subs...
With experience at increasing production levels, GaAs/Ge cells are proving their effectiveness for s...
Solar cells are widely used in all near-Earth space missions, with solar panels increasingly getting...
Several oxidation techniques are discussed which have been found to increase the open circuit (V sub...
A heterojunction or Schottky barrier photovoltaic device is described, comprising a conductive base ...