Add to ORKGA body including P type indium phosphide has an ohmic contact thereon of an alloy of by weight 81% to 86% gold (Au), 11% to 14% germanium (Ge) and 2% to 5% zinc (Zn). This contact has a low resistance and good adhesion to the indium phosphide body
The performance and reliability of semiconductor devices depend critically on the electrical quality...
We report on Pd/Ag/Au/Ti/Au alloyed metallic contact to pGaN. An 800 °C anneal for 1 min in flowing ...
Barrier diodes formed by nickel evaporation on undoped gallium phosphide by vertical liquid epitax
We have investigated the electrical and metallurgical behavior of Ni, Au-Ni, and Au-Ge-Ni contacts o...
The metallurgical and electrical behavior of Au/Zn contacting metallization on p-type InP was invest...
Due to the character of the original source materials and the nature of batch digitization, quality ...
Due to the character of the original source materials and the nature of batch digitization, quality ...
A process to simultaneously form high-quality ohmic contacts to n-InP and p-InGaAs has been develope...
We have investigated the correlation between contact resistance, heat treatment, and micro structure...
The electrical and metallurgical properties of Au-Zn contacts to p-type InP, prepared by vacuum evap...
An attempt has been made to improve the electrical and metallurgical stability of Au-Be alloyed cont...
Citation: Frye, C. D., Kucheyev, S. O., Edgar, J. H., Voss, L. F., Conway, A. M., Shao, Q. H., & Nik...
SIGLELD:D48491/84 / BLDSC - British Library Document Supply CentreGBUnited Kingdo
An investigation is made into the possibility of providing low resistance contacts to shallow juncti...
Codeposi t ion of go ld-pa l lad ium- indium and pa l lad ium- ind ium alloys onto n-GaAs substrates...
The performance and reliability of semiconductor devices depend critically on the electrical quality...
We report on Pd/Ag/Au/Ti/Au alloyed metallic contact to pGaN. An 800 °C anneal for 1 min in flowing ...
Barrier diodes formed by nickel evaporation on undoped gallium phosphide by vertical liquid epitax
We have investigated the electrical and metallurgical behavior of Ni, Au-Ni, and Au-Ge-Ni contacts o...
The metallurgical and electrical behavior of Au/Zn contacting metallization on p-type InP was invest...
Due to the character of the original source materials and the nature of batch digitization, quality ...
Due to the character of the original source materials and the nature of batch digitization, quality ...
A process to simultaneously form high-quality ohmic contacts to n-InP and p-InGaAs has been develope...
We have investigated the correlation between contact resistance, heat treatment, and micro structure...
The electrical and metallurgical properties of Au-Zn contacts to p-type InP, prepared by vacuum evap...
An attempt has been made to improve the electrical and metallurgical stability of Au-Be alloyed cont...
Citation: Frye, C. D., Kucheyev, S. O., Edgar, J. H., Voss, L. F., Conway, A. M., Shao, Q. H., & Nik...
SIGLELD:D48491/84 / BLDSC - British Library Document Supply CentreGBUnited Kingdo
An investigation is made into the possibility of providing low resistance contacts to shallow juncti...
Codeposi t ion of go ld-pa l lad ium- indium and pa l lad ium- ind ium alloys onto n-GaAs substrates...
The performance and reliability of semiconductor devices depend critically on the electrical quality...
We report on Pd/Ag/Au/Ti/Au alloyed metallic contact to pGaN. An 800 °C anneal for 1 min in flowing ...
Barrier diodes formed by nickel evaporation on undoped gallium phosphide by vertical liquid epitax