In this paper, we present a detailed algorithm to compute the current-voltage characteristics of the single electron circuits by Monte Carlo method. Our simulator is designed to solve capacitance systems that contain tunnel junctions. The simulation process is based on orthodox theory. Single electron box, single electron transistor, electron pump and inverter circuits have been investigated, and the results are compared with the previous relevant literature
This write-up describes an efficient numerical method for the Monte Carlo calculation of the spectra...
Abstract- This paper presents a new exact analytical model for Single electron transistor (SET) appl...
With single-electron tunneling (SET) technology it is possible to build electronic circuits with ext...
Single-electron transistor (SET) can offer lower power consumption and faster operating speed in the...
The analytical I-V model of single electron transistor has been established and simulated by c...
Abstract—SIMON is a single-electron tunnel device and circuit simulator that is based on a Monte Car...
Single-electron tunnelling (SET) devices have very promising properties, like their extremely low po...
Abstract—SIMON is a single-electron tunnel device and circuit simulator that is based on a Monte Car...
Studying of single electronics should consider both the temperature and the circuit capacitance as b...
We describe a new and efficient method for numerical study of the dynamics and statistics of single-...
Considering modeling of nanoelectronic devices, it is argued that four really different modeling lev...
According to the rules of quantum mechanics there is a non-vanishing probability of for an electron ...
V tem delu smo predstavili uporabo orodja MOSES (Monte-Carlo Single- Electronics Simulator), kot met...
The single-particle Monte Carlo simulation for the electron transport in semiconductor devices is pr...
textThe physics of electron devices is investigated within the framework of Semiclassical Monte Car...
This write-up describes an efficient numerical method for the Monte Carlo calculation of the spectra...
Abstract- This paper presents a new exact analytical model for Single electron transistor (SET) appl...
With single-electron tunneling (SET) technology it is possible to build electronic circuits with ext...
Single-electron transistor (SET) can offer lower power consumption and faster operating speed in the...
The analytical I-V model of single electron transistor has been established and simulated by c...
Abstract—SIMON is a single-electron tunnel device and circuit simulator that is based on a Monte Car...
Single-electron tunnelling (SET) devices have very promising properties, like their extremely low po...
Abstract—SIMON is a single-electron tunnel device and circuit simulator that is based on a Monte Car...
Studying of single electronics should consider both the temperature and the circuit capacitance as b...
We describe a new and efficient method for numerical study of the dynamics and statistics of single-...
Considering modeling of nanoelectronic devices, it is argued that four really different modeling lev...
According to the rules of quantum mechanics there is a non-vanishing probability of for an electron ...
V tem delu smo predstavili uporabo orodja MOSES (Monte-Carlo Single- Electronics Simulator), kot met...
The single-particle Monte Carlo simulation for the electron transport in semiconductor devices is pr...
textThe physics of electron devices is investigated within the framework of Semiclassical Monte Car...
This write-up describes an efficient numerical method for the Monte Carlo calculation of the spectra...
Abstract- This paper presents a new exact analytical model for Single electron transistor (SET) appl...
With single-electron tunneling (SET) technology it is possible to build electronic circuits with ext...