A 1.2V Receiver Front-End for Multi-Standard Wireless Applications in 65 nm CMOS LP

Abstract—A low-power low-voltage wide-band inductor-less multi-standard receiver RF front-end in a digital CMOS 65nm Low Power (LP) process is described. S11 less than-10 dB is measured in the frequency range from 10MHz up to 5GHz. The front-end featuring two gain modes, achieves a voltage gain of 29dB in the high voltage gain mode, and a voltage gain of 23dB in the low voltage gain mode. The 3dB bandwidth of the RF front-end is 2.5GHz. The measured NF at 1GHz is 5.5dB in the high gain mode and 7.7dB in the low gain mode. The front-end achieves an IIP3 of –13.5dBm and –7.5dBm in the high and the low gain mode, respectively. It consumes 13 mA from a 1.2V supply in both gain modes. The implemented front-end occupies a chip area of 670um x 860um. I