Essential Ingredients for Modeling of Hot-Carrier Degradation in Ultra-Scaled MOSFETs

Abstract—We present a novel approach to hot-carrier degra-dation (HCD) simulation, which for the first time considers and incorporates mechanisms crucial for HCD. First, two main path-ways of Si-H bond dissociation, namely bond-breakage triggered by a single hot carrier and induced by multivibrational bond excitation, are combined and considered consistently. Second, we show how drastically electron-electron scattering affects the whole HCD picture. Furthermore, dispersion of the activation en-ergy of bond dissociation substantially changes defect generation rates. Finally, the interaction between the electric field and the dipole moment of the bond leads to interface states created near the source end of the channel. To demonstrate the importance of all these peculiarities we use ultra-scaled n-MOSFETs with a channel gate of 65 nm. I